BPV11 Vishay, BPV11 Datasheet - Page 2

• Manufacturer Part Number: BPV11
• Description: Photodetector Transistors NPN Phototransistor 80V 150mW 450-1080nm
• Manufacturer: Vishay
• Type: Chipr

Specifications of BPV11

• Maximum Power Dissipation: 150 mW
• Maximum Dark Current: 50 nA
• Maximum Operating Temperature: + 100 C
• Package / Case: T-1 3/4
• Transistor Polarity: NPN
• Wavelength Typ: 850nm
• Power Consumption: 150mW
• Viewing Angle: 15°
• No. Of Pins: 2
• Light Current: 10mA
• Dark Current: 50nA
• C-e Breakdown Voltage: 70V
• Current Rating: 50mA
• Transistor Case Style: T-1 3/4
• Current Ic Typ: 10mA
• Fall Time Tf: 3.8µs
• Half Angle: 15°
• Rohs Compliant: Yes
• Voltage - Collector Emitter Breakdown (max): 70V
• Current - Collector (ic) (max): 10mA
• Current - Dark (id) (max): 50nA
• Wavelength: 850nm
• Power - Max: 150mW
• Mounting Type: Through Hole
• Orientation: Top View
• Svhc: No SVHC (20-Jun-2011)
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Lens Type: Water Clear
• Collector-emitter Voltage: 70V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.3V
• Dark Current (max): 50nA
• Power Dissipation: 150mW
• Peak Wavelength: 850nm
• Half-intensity Angle: 30deg
• Mounting: Through Hole
• Pin Count: 2
• Package Type: T-1 3/4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

BPV11
Vishay Semiconductors
Electrical Characteristics
T
Optical Characteristics
T
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
www.vishay.com
2
Collector Emitter Breakdown
Voltage
Collector-emitter dark current
DC Current Gain
Collector-emitter capacitance
Collector - base capacitance
Collector Light Current
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn-On Time
Turn-Off Time
Cut-Off Frequency
amb
amb
94 8300
Figure 1. Total Power Dissipation vs. Ambient Temperature
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
200
160
120
80
40
0
0
Parameter
Parameter
T
20
amb
– Ambient Temperature(°C )
40
60
I
V
V
V
V
E
V
E
V
V
V
C
I
C
CE
CE
CE
CB
e
CE
e
S
S
S
R
= 1 mA
= 1 mW/cm
= 1 mW/cm
= 1 mA
thJA
= 5 V, I
= 5 V, I
= 5 V, I
= 10 V, E = 0
= 5 V, I
= 0 V, f = 1 MHz, E = 0
= 0 V, f = 1 MHz, E = 0
= 5 V
80
Test condition
Test condition
C
C
C
C
100
= 5 mA, R
= 5 mA, R
= 5 mA, R
= 5 mA, E = 0
2
2
, λ = 950 nm,
, λ = 950 nm,
L
L
L
= 100 Ω
= 100 Ω
= 100 Ω
V
Symbol
Symbol
V
(BR)CEO
C
C
I
λ
CEO
h
CEsat
94 8249
I
t
t
CEO
CBO
λ
ϕ
on
off
f
FE
ca
0.5
Figure 2. Collector Dark Current vs. Ambient Temperature
c
p
10
10
10
10
10
4
3
2
1
0
20
Min
Min
T
70
3
amb
40
– Ambient Temperature ( °C )
V
CE
=10V
620 to 980
60
± 15
Typ.
Typ.
450
850
130
110
15
19
10
1
6
5
80
Document Number 81504
Max
Max
300
50
Rev. 1.4, 08-Mar-05
100
Unit
Unit
kHz
deg
mA
nm
nm
mV
nA
pF
pF
µs
µs
V