BPV11 Vishay, BPV11 Datasheet - Page 4

• Manufacturer Part Number: BPV11
• Description: Photodetector Transistors NPN Phototransistor 80V 150mW 450-1080nm
• Manufacturer: Vishay
• Type: Chipr

Specifications of BPV11

• Maximum Power Dissipation: 150 mW
• Maximum Dark Current: 50 nA
• Maximum Operating Temperature: + 100 C
• Package / Case: T-1 3/4
• Transistor Polarity: NPN
• Wavelength Typ: 850nm
• Power Consumption: 150mW
• Viewing Angle: 15°
• No. Of Pins: 2
• Light Current: 10mA
• Dark Current: 50nA
• C-e Breakdown Voltage: 70V
• Current Rating: 50mA
• Transistor Case Style: T-1 3/4
• Current Ic Typ: 10mA
• Fall Time Tf: 3.8µs
• Half Angle: 15°
• Rohs Compliant: Yes
• Voltage - Collector Emitter Breakdown (max): 70V
• Current - Collector (ic) (max): 10mA
• Current - Dark (id) (max): 50nA
• Wavelength: 850nm
• Power - Max: 150mW
• Mounting Type: Through Hole
• Orientation: Top View
• Svhc: No SVHC (20-Jun-2011)
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Lens Type: Water Clear
• Collector-emitter Voltage: 70V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.3V
• Dark Current (max): 50nA
• Power Dissipation: 150mW
• Peak Wavelength: 850nm
• Half-intensity Angle: 30deg
• Mounting: Through Hole
• Pin Count: 2
• Package Type: T-1 3/4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

BPV11
Vishay Semiconductors
www.vishay.com
4
Figure 11. Relative Radiant Sensitivity vs. Angular Displacement
94 8253
94 8348
94 8248
Figure 10. Relative Spectral Sensitivity vs. Wavelength
Figure 9. Turn On/Turn Off Time vs. Collector Current
1.0
0.9
0.8
0.7
1.0
0.8
0.6
0.4
0.2
12
10
8
6
4
2
0
0
400
0
0.6
0.4
4
I
C
600
λ
– Collector Current ( mA )
0.2
– Wavelength ( nm )
8
0°
0
800
λ
0.2
R
V
12
10°
=950nm
L
CE
=100
=5V
t
t
off
on
0.4
Ω
1000
20 °
16
0.6
30°
40°
50°
60°
70°
80°
Document Number 81504
Rev. 1.4, 08-Mar-05