BPV11 Vishay, BPV11 Datasheet - Page 5
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BPV11
Manufacturer Part Number
BPV11
Description
Photodetector Transistors NPN Phototransistor 80V 150mW 450-1080nm
Manufacturer
Vishay
Type
Chipr
Specifications of BPV11
Maximum Power Dissipation
150 mW
Maximum Dark Current
50 nA
Maximum Operating Temperature
+ 100 C
Package / Case
T-1 3/4
Transistor Polarity
NPN
Wavelength Typ
850nm
Power Consumption
150mW
Viewing Angle
15°
No. Of Pins
2
Light Current
10mA
Dark Current
50nA
C-e Breakdown Voltage
70V
Current Rating
50mA
Transistor Case Style
T-1 3/4
Current Ic Typ
10mA
Fall Time Tf
3.8µs
Half Angle
15°
Rohs Compliant
Yes
Voltage - Collector Emitter Breakdown (max)
70V
Current - Collector (ic) (max)
10mA
Current - Dark (id) (max)
50nA
Wavelength
850nm
Power - Max
150mW
Mounting Type
Through Hole
Orientation
Top View
Svhc
No SVHC (20-Jun-2011)
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Lens Type
Water Clear
Collector-emitter Voltage
70V
Collector Current (dc) (max)
50mA
Collector-emitter Sat Volt (max)
0.3V
Dark Current (max)
50nA
Power Dissipation
150mW
Peak Wavelength
850nm
Half-intensity Angle
30deg
Mounting
Through Hole
Pin Count
2
Package Type
T-1 3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
BPV11
Vishay Semiconductors
Package Dimensions in mm
9612200
Document Number 81504
www.vishay.com
Rev. 1.4, 08-Mar-05
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