SI7114ADN-T1-GE3 Vishay, SI7114ADN-T1-GE3 Datasheet - Page 2

• Manufacturer Part Number: SI7114ADN-T1-GE3
• Description: MOSFET Power 30V 35A 39W
• Manufacturer: Vishay

Specifications of SI7114ADN-T1-GE3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0075 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 50 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK 1212
• Continuous Drain Current Id: 18.3A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 10mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si7114DN
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
MOSFET SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
b
60
48
36
24
12
0
0.0
0.5
a
a
V
DS
Output Characteristics
a
V
- Drain-to-Source Voltage (V)
GS
1.0
= 10 thru 4 V
a
1.5
Symbol
R
V
J
I
t
t
I
I
DS(on)
V
GS(th)
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
= 25 °C, unless otherwise noted
Q
Q
g
R
t
2.0
t
t
SD
rr
fs
gs
gd
r
f
g
rr
g
2.5
3 V
V
V
DS
I
DS
D
= 15 V, V
I
I
≅ 1 A, V
3.0
F
F
V
= 30 V, V
V
V
V
V
V
V
V
= 3.2 A, di/dt = 100 A/µs
= 3.2 A, di/dt = 100 A/µs
DS
DS
GS
I
GS
DS
S
DD
DS
DS
Test Conditions
= 3.2 A, V
= 0 V, V
= V
= 4.5 V, I
= 10 V, I
= 15 V, I
= 30 V, V
≥ 5 V, V
= 15 V, R
GEN
f = 1 MHz
GS
GS
GS
, I
= 4.5 V, I
= 10 V, R
= 0 V, T
GS
D
GS
D
D
D
GS
GS
= 250 µA
L
= 18.3 A
= 18.3 A
= 15.9 A
= ± 20 V
= 10 V
= 15 Ω
= 0 V
= 0 V
J
D
g
= 55 °C
= 18.3 A
= 6 Ω
60
48
36
24
12
0
0.0
0.5
V
1.0
Min.
Transfer Characteristics
GS
0.7
40
1
- Gate-to-Source Voltage (V)
1.5
0.0062
0.0081
Typ.
12.5
0.7
6.3
3.6
1.4
77
10
10
45
10
30
19
T
2.0
S-80581-Rev. E, 17-Mar-08
C
25 °C
Document Number: 73039
= 125 °C
2.5
0.0075
± 100
0.010
Max.
1.2
2.1
19
15
15
70
15
60
38
3
1
5
3.0
- 55 °C
3.5
Unit
nC
nC
nA
µA
ns
Ω
Ω
V
A
S
V
4.0