SI7114ADN-T1-GE3 Vishay, SI7114ADN-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI7114ADN-T1-GE3
• Description: MOSFET Power 30V 35A 39W
• Manufacturer: Vishay

Specifications of SI7114ADN-T1-GE3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0075 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 50 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK 1212
• Continuous Drain Current Id: 18.3A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 10mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73039
S-80581-Rev. E, 17-Mar-08
0.012
0.010
0.008
0.006
0.004
0.002
0.000
10
60
10
8
6
4
2
0
1
0.0
0
0
Source-Drain Diode Forward Voltage
V
I
D
DS
On-Resistance vs. Drain Current
0.2
= 18.3 A
5
12
V
= 15 V
V
GS
SD
T
Q
J
= 4.5 V
g
- Source-to-Drain Voltage (V)
= 150 °C
- Total Gate Charge (nC)
10
0.4
I
D
Gate Charge
- Drain Current (A)
24
15
0.6
36
V
20
0.8
GS
= 10 V
T
J
48
= 25 °C
25
1.0
60
30
1.2
0.030
0.025
0.020
0.015
0.010
0.005
0.000
2500
2000
1500
1000
1.6
1.4
1.2
1.0
0.8
0.6
500
- 50
0
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
- 25
V
I
rss
D
GS
= 18.3 A
I
D
5
= 10 V
= 5 A
2
V
V
T
0
DS
GS
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
10
25
Capacitance
C
4
oss
I
D
50
= 18.3 A
15
Vishay Siliconix
C
75
6
iss
Si7114DN
20
www.vishay.com
100
8
25
125
150
10
30
3