SI7114ADN-T1-GE3 Vishay, SI7114ADN-T1-GE3 Datasheet - Page 3
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SI7114ADN-T1-GE3
Manufacturer Part Number
SI7114ADN-T1-GE3
Description
MOSFET Power 30V 35A 39W
Manufacturer
Vishay
Specifications of SI7114ADN-T1-GE3
Transistor Polarity
N-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0075 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
50 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18 A
Power Dissipation
3700 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK 1212
Continuous Drain Current Id
18.3A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
10mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7114ADN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73039
S-80581-Rev. E, 17-Mar-08
0.012
0.010
0.008
0.006
0.004
0.002
0.000
10
60
10
8
6
4
2
0
1
0.0
0
0
Source-Drain Diode Forward Voltage
V
I
D
DS
On-Resistance vs. Drain Current
0.2
= 18.3 A
5
12
V
= 15 V
V
GS
SD
T
Q
J
= 4.5 V
g
- Source-to-Drain Voltage (V)
= 150 °C
- Total Gate Charge (nC)
10
0.4
I
D
Gate Charge
- Drain Current (A)
24
15
0.6
36
V
20
0.8
GS
= 10 V
T
J
48
= 25 °C
25
1.0
60
30
1.2
0.030
0.025
0.020
0.015
0.010
0.005
0.000
2500
2000
1500
1000
1.6
1.4
1.2
1.0
0.8
0.6
500
- 50
0
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
- 25
V
I
rss
D
GS
= 18.3 A
I
D
5
= 10 V
= 5 A
2
V
V
T
0
DS
GS
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
10
25
Capacitance
C
4
oss
I
D
50
= 18.3 A
15
Vishay Siliconix
C
75
6
iss
Si7114DN
20
www.vishay.com
100
8
25
125
150
10
30
3