SI7114ADN-T1-GE3 Vishay, SI7114ADN-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI7114ADN-T1-GE3
• Description: MOSFET Power 30V 35A 39W
• Manufacturer: Vishay

Specifications of SI7114ADN-T1-GE3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0075 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 50 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK 1212
• Continuous Drain Current Id: 18.3A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 10mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si7114DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
0.0
- 50
0.01
0.1
2
1
10
- 25
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
I
T
D
J
= 250 µA
25
- Temperature (°C)
10
-3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
Limited by
0.01
100
R
100
0.1
10
10
DS(on)
1
0.1
-2
* V
125
Limited
*
I
D(on)
GS
Single Pulse
T
> minimum V
A
150
V
= 25 °C
DS
Square Wave Pulse Duration (s)
Safe Operating Area
- Drain-to-Source Voltage (V)
10
1
-1
GS
at which R
BV
DSS
Limited
DS(on)
10
50
40
30
20
10
0
1
0.01
is specified
Single Pulse Power, Junction-to-Ambient
I
DM
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
0.1
Limited
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
1
- T
Time (s)
A
t
1
= P
S-80581-Rev. E, 17-Mar-08
t
Document Number: 73039
2
DM
Z
10
thJA
thJA
100
t
t
1
2
(t)
= 65 °C/W
100
600
600