SI2304DDS-T1-GE3 Vishay, SI2304DDS-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI2304DDS-T1-GE3
• Description: MOSFET Small Signal 30V 3.6A 1.7W 60mohm @ 10V
• Manufacturer: Vishay

Specifications of SI2304DDS-T1-GE3

• Transistor Polarity: N-Channel
• Configuration: Single
• Resistance Drain-source Rds (on): 0.049 Ohms
• Gate Charge Qg: 4.5 nC
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 1.7 W
• Mounting Style: SMD/SMT
• Package / Case: TO-236
• Continuous Drain Current Id: 3.6A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 60mohm
• Threshold Voltage Vgs Typ: 2.2V
• Power Dissipation Pd: 1.1W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 65175
S09-1496-Rev. A, 10-Aug-09
0.10
0.08
0.06
0.04
0.02
0.00
15
12
10
On-Resistance vs. Drain Current and Gate Voltage
9
6
3
0
8
6
4
2
0
0.0
0
0
I
D
= 3.4 A
0.5
1
3
V
DS
Output Characteristics
Q
V
- Drain-to-Source Voltage (V)
g
DS
1.0
V
V
I
- Total Gate Charge (nC)
D
GS
GS
Gate Charge
= 7.5 V
- Drain Current (A)
2
6
= 4.5 V
= 10 V
V
1.5
DS
= 15 V
V
3
9
DS
V
GS
2.0
= 24 V
= 10 V thru 4 V
V
GS
12
4
2.5
= 3 V
3.0
15
5
300
250
200
150
100
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
50
5
4
3
2
1
0
0
- 50
0.0
0
I
C
D
On-Resistance vs. Junction Temperature
rss
= 3.2 A
- 25
0.5
5
V
V
C
DS
Transfer Characteristics
T
GS
0
oss
J
1.0
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
10
25
Capacitance
C
T
1.5
iss
C
= 125 °C
15
50
T
Vishay Siliconix
T
C
C
2.0
= 25 °C
= - 55 °C
Si2304DDS
V
75
GS
20
= 10 V
2.5
www.vishay.com
100
25
3.0
125
150
3.5
30
3