SI2304DDS-T1-GE3 Vishay, SI2304DDS-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI2304DDS-T1-GE3
• Description: MOSFET Small Signal 30V 3.6A 1.7W 60mohm @ 10V
• Manufacturer: Vishay

Specifications of SI2304DDS-T1-GE3

• Transistor Polarity: N-Channel
• Configuration: Single
• Resistance Drain-source Rds (on): 0.049 Ohms
• Gate Charge Qg: 4.5 nC
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 1.7 W
• Mounting Style: SMD/SMT
• Package / Case: TO-236
• Continuous Drain Current Id: 3.6A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 60mohm
• Threshold Voltage Vgs Typ: 2.2V
• Power Dissipation Pd: 1.1W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65175
S09-1496-Rev. A, 10-Aug-09
5
4
3
2
1
0
0
Package Limited
25
D
T
is based on T
C
Current Derating*
50
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
150
2.0
1.5
1.0
0.5
0.0
25
50
T
C
- Case Temperature (°C)
Power Derating
75
Vishay Siliconix
100
Si2304DDS
www.vishay.com
125
150
5