SI2304DDS-T1-GE3 Vishay, SI2304DDS-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI2304DDS-T1-GE3
• Description: MOSFET Small Signal 30V 3.6A 1.7W 60mohm @ 10V
• Manufacturer: Vishay

Specifications of SI2304DDS-T1-GE3

• Transistor Polarity: N-Channel
• Configuration: Single
• Resistance Drain-source Rds (on): 0.049 Ohms
• Gate Charge Qg: 4.5 nC
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 1.7 W
• Mounting Style: SMD/SMT
• Package / Case: TO-236
• Continuous Drain Current Id: 3.6A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 60mohm
• Threshold Voltage Vgs Typ: 2.2V
• Power Dissipation Pd: 1.1W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si2304DDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65175.
www.vishay.com
6
0.01
0.01
0.1
0.1
1
1
10
10
-4
0.05
0.02
-4
Duty Cycle = 0.5
0.2
0.1
0.1
0.2
Duty Cycle = 0.5
Single Pulse
Single Pulse
0.02
0.05
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
10
-2
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
P
DM
-1
JM
- T
t
1
A
S09-1496-Rev. A, 10-Aug-09
= P
t
2
Document Number: 65175
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 130 °C/W
1000
1