SI2304DDS-T1-GE3 Vishay, SI2304DDS-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI2304DDS-T1-GE3
• Description: MOSFET Small Signal 30V 3.6A 1.7W 60mohm @ 10V
• Manufacturer: Vishay

Specifications of SI2304DDS-T1-GE3

• Transistor Polarity: N-Channel
• Configuration: Single
• Resistance Drain-source Rds (on): 0.049 Ohms
• Gate Charge Qg: 4.5 nC
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 1.7 W
• Mounting Style: SMD/SMT
• Package / Case: TO-236
• Continuous Drain Current Id: 3.6A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 60mohm
• Threshold Voltage Vgs Typ: 2.2V
• Power Dissipation Pd: 1.1W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si2304DDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
2.4
2.2
2.0
1.8
1.6
1.4
1.2
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.3
V
T
SD
0
J
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
25
0.6
- Temperature (°C)
50
I
0.9
D
75
= 250 µA
T
J
0.01
= 25 °C
100
0.1
10
100
1
0.1
1.2
Limited by R
Single Pulse
Safe Operating Area, Junction-to-Ambient
125
* V
T
A
GS
= 25 °C
> minimum V
1.5
150
V
DS
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
BVDSS Limited
at which R
0.14
0.12
0.10
0.08
0.06
0.04
10
25
20
15
10
DS(on)
5
0
0.001
0
is specified
On-Resistance vs. Gate-to-Source Voltage
I
D
100 µs
10 ms
1 s, 10 s
1 ms
100 ms
DC
= 3.2 A
0.01
2
V
100
GS
- Gate-to-Source Voltage (V)
0.1
Single Pulse Power
4
Time (s)
1
S09-1496-Rev. A, 10-Aug-09
Document Number: 65175
6
10
T
T
J
J
= 25 °C
8
= 125 °C
100
1000
10