PSMN045-80YS,115 NXP Semiconductors, PSMN045-80YS,115 Datasheet - Page 10

• Manufacturer Part Number: PSMN045-80YS,115
• Description: MOSFET N-CH LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN045-80YS,115

• Input Capacitance (ciss) @ Vds: 675pF @ 40V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 12.5nC @ 10V
• Power - Max: 56W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 45 mOhms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 17 A, 24 A
• Power Dissipation: 56 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5587-2

NXP Semiconductors
PSMN045-80YS
Product data sheet
Fig 17. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
All information provided in this document is subject to legal disclaimers.
(pF)
C
10
10
10
3
2
10
Rev. 02 — 25 October 2010
-1
N-channel LFPAK 80 V 45 mΩ standard level MOSFET
1
10
V
DS
003aad051
(V)
C
C
C
PSMN045-80YS
oss
iss
rss
10
2
© NXP B.V. 2010. All rights reserved.
10 of 15