PSMN045-80YS,115 NXP Semiconductors, PSMN045-80YS,115 Datasheet - Page 8

• Manufacturer Part Number: PSMN045-80YS,115
• Description: MOSFET N-CH LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN045-80YS,115

• Input Capacitance (ciss) @ Vds: 675pF @ 40V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 12.5nC @ 10V
• Power - Max: 56W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 45 mOhms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 17 A, 24 A
• Power Dissipation: 56 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5587-2

NXP Semiconductors
PSMN045-80YS
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS(th)
R
(mΩ)
(V)
100
DSon
80
60
40
20
5
4
3
2
1
0
−60
of gate-source voltage; typical values
junction temperature
Drain-source on-state resistance as a function
0
5
0
10
60
max
min
typ
120
15
All information provided in this document is subject to legal disclaimers.
V
003aad054
003aad280
T
GS
j
(°C)
(V)
Rev. 02 — 25 October 2010
180
20
N-channel LFPAK 80 V 45 mΩ standard level MOSFET
Fig 10. Transfer characteristics: drain current as a
Fig 12. Sub-threshold drain current as a function of
(A)
I
10
10
10
10
10
10
D
(A)
40
30
20
10
I
−1
−2
−3
−4
−5
−6
D
0
function of gate-source voltage; typical values
gate-source voltage
0
0
T
2
j
= 175 °C
2
PSMN045-80YS
min
4
typ
25 °C
4
6
max
V
© NXP B.V. 2010. All rights reserved.
GS
V
003aad048
GS
(V)
03aa35
(V)
8
6
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