PSMN045-80YS,115 NXP Semiconductors, PSMN045-80YS,115 Datasheet - Page 6
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PSMN045-80YS,115
Manufacturer Part Number
PSMN045-80YS,115
Description
MOSFET N-CH LFPAK
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN045-80YS115.pdf
(15 pages)
Specifications of PSMN045-80YS,115
Input Capacitance (ciss) @ Vds
675pF @ 40V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
45 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
12.5nC @ 10V
Power - Max
56W
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
45 mOhms
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
17 A, 24 A
Power Dissipation
56 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5587-2
NXP Semiconductors
6. Characteristics
Table 6.
PSMN045-80YS
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
(BR)DSS
GS(th)
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
internal gate resistance (AC)
total gate charge
gate-source charge
pre-threshold gate-source
charge
post-threshold gate-source
charge
gate-drain charge
gate-source plateau voltage
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 October 2010
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
V
f = 1 MHz
I
I
see
I
see
I
see
I
V
T
V
R
D
D
D
D
D
D
D
D
D
D
j
DS
DS
GS
GS
GS
GS
GS
DS
DS
G(ext)
= 25 °C; see
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 0 A; V
= 15 A; V
= 15 A; V
= 15 A; V
= 15 A; V
Figure
Figure
Figure
Figure 13
Figure 13
Figure
Figure 14
Figure
= 80 V; V
= 80 V; V
= 40 V; V
= 40 V; R
= -20 V; V
= 20 V; V
= 10 V; I
= 10 V; I
= 10 V; I
= 4.7 Ω
DS
N-channel LFPAK 80 V 45 mΩ standard level MOSFET
11; see
11; see
12; see
14; see
14; see
DS
DS
DS
DS
DS
DS
DS
D
D
D
= 0 V; V
GS
GS
GS
DS
L
GS
GS
DS
= 40 V; V
= 40 V; V
= 40 V; V
= 40 V; see
= 5 A; T
= 5 A; T
= 5 A; T
= V
= V
= V
= 2.7 Ω; V
Figure 17
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
Figure 12
Figure 12
Figure 11
Figure 15
Figure 15
; T
; T
; T
GS
j
j
j
= 175 °C;
= 100 °C;
= 25 °C
j
j
j
GS
GS
GS
j
j
j
= 10 V
= 175 °C;
= -55 °C;
= 25 °C;
j
j
j
GS
= 25 °C
= 125 °C
= 25 °C
= -55 °C
= 25 °C
= 25 °C
Figure 14
= 10 V;
= 10 V;
= 10 V;
= 10 V;
PSMN045-80YS
Min
73
80
1
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
3
-
-
-
-
-
-
37
0.73
9
12.5
3.8
1.9
1.9
3.1
4.9
675
79
48
9.2
4.6
18
4.4
© NXP B.V. 2010. All rights reserved.
Max
-
-
-
4.6
4
1
50
100
100
103
72
45
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
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