PSMN045-80YS,115 NXP Semiconductors, PSMN045-80YS,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN045-80YS,115
• Description: MOSFET N-CH LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN045-80YS,115

• Input Capacitance (ciss) @ Vds: 675pF @ 40V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 12.5nC @ 10V
• Power - Max: 56W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 45 mOhms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 17 A, 24 A
• Power Dissipation: 56 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5587-2

NXP Semiconductors
Table 6.
PSMN045-80YS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
1000
(pF)
(A)
C
800
600
400
200
I
40
30
20
10
D
0
0
function of drain-source voltage; typical values
function of gate-source voltage; typical values
Output characteristics: drain current as a
Input and reverse transfer capacitances as a
0
2
Characteristics
C
C
iss
rss
20
Parameter
source-drain voltage
reverse recovery time
recovered charge
2
10
4
8
6
4
…continued
6
6
V
GS
8
(V) =
All information provided in this document is subject to legal disclaimers.
8
V
5.5
003aad046
003aad052
V
GS
DS
(V)
4.5
(V)
5
Rev. 02 — 25 October 2010
Conditions
I
see
I
V
10
10
S
S
GS
= 15 A; V
= 5 A; dI
Figure 16
= 0 V; V
N-channel LFPAK 80 V 45 mΩ standard level MOSFET
S
GS
/dt = 100 A/µs;
DS
Fig 6.
Fig 8.
= 0 V; T
= 40 V
(S)
g
R
(mΩ)
fs
DSon
100
35
30
25
20
15
10
80
60
40
20
5
0
of drain current; typical values
drain current; typical values
j
Drain-source on-state resistance as a function
Forward transconductance as a function of
0
0
= 25 °C;
V
10
GS
10
(V) =
PSMN045-80YS
20
5
Min
-
-
-
20
30
Typ
0.82
32
42
30
5.5
© NXP B.V. 2010. All rights reserved.
40
003aad047
003aad053
I
D
I
D
6
(A)
Max
1.2
-
-
(A)
8
10
20
40
50
Unit
V
ns
nC
7 of 15