BUK9520-100B,127 NXP Semiconductors, BUK9520-100B,127 Datasheet - Page 3

• Manufacturer Part Number: BUK9520-100B,127
• Description: MOSFET N-CH 100V 63A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9520-100B,127

• Input Capacitance (ciss) @ Vds: 5657pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 63A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 53.4nC @ 5V
• Power - Max: 203W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 63 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5227

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK9520-100B_1
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
(%)
I
der
120
80
40
0
function of mounting base temperature
Normalized continuous drain current as a
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source avalanche
energy
50
100
Conditions
T
R
T
T
T
T
T
t
I
T
p
D
j
mb
mb
mb
mb
mb
j(init)
GS
150
≤ 10 µs; pulsed; T
≥ 25 °C; T
= 63 A; V
= 25 °C; V
= 100 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C
T
= 20 kΩ
= 25 °C; unclamped
mb
03aa24
(°C)
200
sup
j
≤ 175 °C
Rev. 01 — 6 May 2009
p
GS
≤ 100 V; R
≤ 10 µs; pulsed; see
GS
Figure 2
= 5 V; see
= 5 V; see
mb
= 25 °C
Fig 2.
GS
Figure
= 50 Ω; V
P
Figure 1
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
1; see
Figure 3
GS
N-channel TrenchMOS logic level FET
= 5 V;
Figure 3
50
BUK9520-100B
100
Min
-
-
-15
-
-
-
-
-55
-55
-
-
-
150
© NXP B.V. 2009. All rights reserved.
T
mb
Max
100
100
15
63
45
253
203
175
175
63
253
222
03na19
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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