BUK9520-100B,127 NXP Semiconductors, BUK9520-100B,127 Datasheet - Page 9

• Manufacturer Part Number: BUK9520-100B,127
• Description: MOSFET N-CH 100V 63A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9520-100B,127

• Input Capacitance (ciss) @ Vds: 5657pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 63A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 53.4nC @ 5V
• Power - Max: 203W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 63 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5227

NXP Semiconductors
7. Package outline
Fig 17. Package outline SOT78A (3-lead TO-220AB; SC-46; SFM3)
BUK9520-100B_1
Product data sheet
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
DIMENSIONS (mm are the original dimensions)
Note
1. Terminals in this zone are not tinned.
UNIT
mm
OUTLINE
VERSION
SOT78A
4.5
4.1
A
1.39
1.27
A 1
0.9
0.6
b
IEC
D
L
b 1
1.3
1.0
L 1
D 1
(1)
b 1
0.7
0.4
3-lead TO-220AB
c
JEDEC
15.8
15.2
1
e
D
E
p
REFERENCES
2
e
D 1
6.4
5.9
Rev. 01 — 6 May 2009
0
3
b
10.3
9.7
E
L 2
SC-46
q
JEITA
scale
5
2.54
e
10 mm
15.0
13.5
L
mounting
base
L 1
3.30
2.79
(1)
N-channel TrenchMOS logic level FET
max.
Q
3.0
L 2
A
A 1
BUK9520-100B
PROJECTION
3.8
3.6
c
EUROPEAN
p
3.0
2.7
q
2.6
2.2
Q
© NXP B.V. 2009. All rights reserved.
ISSUE DATE
03-01-22
05-03-14
SOT78A
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