BUK9520-100B,127 NXP Semiconductors, BUK9520-100B,127 Datasheet - Page 7

• Manufacturer Part Number: BUK9520-100B,127
• Description: MOSFET N-CH 100V 63A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9520-100B,127

• Input Capacitance (ciss) @ Vds: 5657pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 63A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 53.4nC @ 5V
• Power - Max: 203W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 63 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5227

NXP Semiconductors
BUK9520-100B_1
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
DS on
120
(A)
50
40
30
20
10
I
90
60
30
D
0
function of gate-source voltage; typical values.
of drain current; typical values.
Transfer characteristics: drain current as a
0
0
2.5
2.7
30
1
3
T
60
j
= 150 °C
2
3.2
90
3.4
V
GS
3
25 °C
120
(V) =
003a a c776
003a a c773
V
GS
I
D
(V)
4.5
10
(A)
150
4
Rev. 01 — 6 May 2009
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.5
1.5
0.5
2
1
0
3
2
1
0
-60
-60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS logic level FET
0
0
BUK9520-100B
60
60
max
typ
min
120
120
© NXP B.V. 2009. All rights reserved.
T
03aa33
03aa29
T
j
j
( ° C)
( ° C)
180
180
7 of 12