PSMN014-60LS,115 NXP Semiconductors, PSMN014-60LS,115 Datasheet - Page 8

• Manufacturer Part Number: PSMN014-60LS,115
• Description: MOSFET N-CH 60V QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN014-60LS,115

• Input Capacitance (ciss) @ Vds: 1264pF @ 30V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 19.6nC @ 10V
• Power - Max: 65W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 14 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 46 A
• Power Dissipation: 56 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5308-2

NXP Semiconductors
PSMN014-60LS
Product data sheet
Fig 13. Gate charge waveform definitions
Fig 15. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-2
V
V
V
GS(pl)
DS
GS(th)
GS
10
Q
GS1
-1
I
Q
D
GS
Q
GS2
1
Q
G(tot)
Q
GD
10
All information provided in this document is subject to legal disclaimers.
V
003aaa508
003aae476
DS
(V)
C
C
C
rss
iss
oss
10
Rev. 2 — 18 August 2010
2
N-channel QFN3333 60 V 14 mΩ standard level MOSFET
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source (diode forward) current as a function of
V
(V)
(A)
GS
I
S
10
50
40
30
20
10
8
6
4
2
0
0
charge; typical values
source-drain (diode forward) voltage; typical
values
0
0
5
0.3
12V
T
j
= 175 °C
PSMN014-60LS
10
48V
0.6
15
V
DS
0.9
= 30V
© NXP B.V. 2010. All rights reserved.
T
20
j
003aae479
003aae480
V
= 25 °C
Q
SD
G
(nC)
(V)
1.2
25
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