PSMN014-60LS,115 NXP Semiconductors, PSMN014-60LS,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN014-60LS,115
• Description: MOSFET N-CH 60V QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN014-60LS,115

• Input Capacitance (ciss) @ Vds: 1264pF @ 30V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 19.6nC @ 10V
• Power - Max: 65W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 14 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 46 A
• Power Dissipation: 56 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5308-2

NXP Semiconductors
PSMN014-60LS
Product data sheet
Fig 9.
Fig 11. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.4
1.6
1.2
0.8
0.4
5
4
3
2
1
0
2
0
-60
junction temperature
-60
factor as a function of junction temperature
Gate-source threshold voltage as a function of
0
0
max
min
typ
60
60
120
120
All information provided in this document is subject to legal disclaimers.
003aae528
T
T
003aae486
j
j
(°C)
(°C)
180
180
Rev. 2 — 18 August 2010
N-channel QFN3333 60 V 14 mΩ standard level MOSFET
Fig 10. Sub-threshold drain current as a function of
Fig 12. Drain-source on-state resistance as a function
(mΩ)
R
(A)
I
10
10
10
10
10
10
D
DSon
60
45
30
15
−1
−2
−3
−4
−5
−6
0
gate-source voltage
of drain current; typical values
0
0
V
GS
15
(V) = 4.5
2
PSMN014-60LS
min
30
typ
4
45
max
© NXP B.V. 2010. All rights reserved.
V
GS
5.0
003aae477
003aae487
I
D
5.5
6.0
7.0
10
(V)
(A)
60
6
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