PSMN014-60LS,115 NXP Semiconductors, PSMN014-60LS,115 Datasheet - Page 10
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PSMN014-60LS,115
Manufacturer Part Number
PSMN014-60LS,115
Description
MOSFET N-CH 60V QFN3333
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN014-60LS115.pdf
(14 pages)
Specifications of PSMN014-60LS,115
Input Capacitance (ciss) @ Vds
1264pF @ 30V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
14 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
19.6nC @ 10V
Power - Max
65W
Mounting Type
Surface Mount
Package / Case
8-VDFN Exposed Pad
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
14 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
46 A
Power Dissipation
56 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5308-2
NXP Semiconductors
7. Package outline
Fig 18. Package outline SOT873-1 (QFN3333)
PSMN014-60LS
Product data sheet
QFN3333: plastic thermal enhanced very thin small outline package; no leads;
8 terminals; body 3.3 x 3.3 x 1.0 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
SOT873-1
VERSION
OUTLINE
max.
A
1
0.05
0.00
A
1
0.45
0.25
terminal 1
index area
terminal 1
index area
b
E
L
L
0.2
X
IEC
1
2
- - -
h
c
3.4
3.2
D
1
8
D
2.4
2.2
h
e
3.4
3.2
JEDEC
E
All information provided in this document is subject to legal disclaimers.
- - -
D
e
D
1
h
1.80
1.58
E
REFERENCES
h
b
0.65
Rev. 2 — 18 August 2010
e
0
5
4
1.95
e
1
N-channel QFN3333 60 V 14 mΩ standard level MOSFET
JEITA
- - -
scale
0.55
0.45
1
L
w
v
B
1
E
M
M
A
0.52
0.35
C
C
L
2
A
2 mm
0.1
B
v
A
0.05
w
A
1
0.1
y
y
1
C
0.1
y
1
PSMN014-60LS
PROJECTION
EUROPEAN
detail X
C
y
© NXP B.V. 2010. All rights reserved.
ISSUE DATE
10-03-10
19-04-10
c
SOT873-1
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