PSMN2R8-40PS,127 NXP Semiconductors, PSMN2R8-40PS,127 Datasheet - Page 10

• Manufacturer Part Number: PSMN2R8-40PS,127
• Description: MOSFET N-CH 40V SOT78
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R8-40PS,127

• Input Capacitance (ciss) @ Vds: 4491pF @ 20V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 71nC @ 10V
• Power - Max: 211W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.3 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 211 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
PSMN2R8-40PS
Product data sheet
Fig 15. Drain-source on-state resistance as a function
Fig 17. Gate-source voltage as a function of gate
R
(mΩ)
V
(V)
DSon
GS
10
10
8
6
4
2
0
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
V
GS
(V) = 5
20
20
40
32 V
40
8 V
60
8
10
60
6.5
V
80
All information provided in this document is subject to legal disclaimers.
DS
Q
003aad432
003aad435
G
I
= 20 V
D
(nC)
(A)
5.5
20
Rev. 01 — 1 November 2010
6
100
80
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
Fig 16. Gate charge waveform definitions
Fig 18. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
PSMN2R8-40PS
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2010. All rights reserved.
V
C
C
C
DS
003aaa508
003aad436
iss
oss
rss
(V)
10
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