PSMN2R8-40PS,127 NXP Semiconductors, PSMN2R8-40PS,127 Datasheet - Page 10
![MOSFET N-CH 40V SOT78](/photos/16/7/160729/to220ab_sml.jpg)
PSMN2R8-40PS,127
Manufacturer Part Number
PSMN2R8-40PS,127
Description
MOSFET N-CH 40V SOT78
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN2R8-40PS127.pdf
(16 pages)
Specifications of PSMN2R8-40PS,127
Input Capacitance (ciss) @ Vds
4491pF @ 20V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.8 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
71nC @ 10V
Power - Max
211W
Mounting Type
Through Hole
Package / Case
TO-220-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.3 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
211 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NXP Semiconductors
PSMN2R8-40PS
Product data sheet
Fig 15. Drain-source on-state resistance as a function
Fig 17. Gate-source voltage as a function of gate
R
(mΩ)
V
(V)
DSon
GS
10
10
8
6
4
2
0
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
V
GS
(V) = 5
20
20
40
32 V
40
8 V
60
8
10
60
6.5
V
80
All information provided in this document is subject to legal disclaimers.
DS
Q
003aad432
003aad435
G
I
= 20 V
D
(nC)
(A)
5.5
20
Rev. 01 — 1 November 2010
6
100
80
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
Fig 16. Gate charge waveform definitions
Fig 18. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
PSMN2R8-40PS
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2010. All rights reserved.
V
C
C
C
DS
003aaa508
003aad436
iss
oss
rss
(V)
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