PSMN2R8-40PS,127 NXP Semiconductors, PSMN2R8-40PS,127 Datasheet - Page 3

• Manufacturer Part Number: PSMN2R8-40PS,127
• Description: MOSFET N-CH 40V SOT78
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R8-40PS,127

• Input Capacitance (ciss) @ Vds: 4491pF @ 20V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 71nC @ 10V
• Power - Max: 211W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.3 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 211 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
PSMN2R8-40PS
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
Continuous current rating is limited by package.
(A)
200
150
100
I
D
50
0
mounting base temperature
Continuous drain current as a function of
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
(1)
50
100
150
All information provided in this document is subject to legal disclaimers.
T
003aad361
mb
(°C)
Rev. 01 — 1 November 2010
200
Conditions
T
T
V
V
pulsed; t
T
T
pulsed; t
V
V
j
j
mb
mb
GS
GS
GS
sup
≥ 25 °C; T
≥ 25 °C; T
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 40 V; unclamped; R
p
p
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
≤ 10 µs; T
≤ 10 µs; T
j
j
Fig 2.
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
= 100 °C; see
= 25 °C; see
P
Figure 2
(%)
= 25 °C; I
der
120
80
40
mb
mb
0
function of mounting base temperature
Normalized total power dissipation as a
0
= 25 °C; see
= 25 °C
GS
GS
D
= 20 kΩ
= 100 A;
= 50 Ω
Figure 1
Figure 1
50
Figure 3
PSMN2R8-40PS
100
[1]
[1]
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
150
© NXP B.V. 2010. All rights reserved.
T
mb
175
175
Max
40
40
20
100
100
797
211
100
797
407
03aa16
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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