PSMN2R8-40PS,127 NXP Semiconductors, PSMN2R8-40PS,127 Datasheet - Page 3
![MOSFET N-CH 40V SOT78](/photos/16/7/160729/to220ab_sml.jpg)
PSMN2R8-40PS,127
Manufacturer Part Number
PSMN2R8-40PS,127
Description
MOSFET N-CH 40V SOT78
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN2R8-40PS127.pdf
(16 pages)
Specifications of PSMN2R8-40PS,127
Input Capacitance (ciss) @ Vds
4491pF @ 20V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.8 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
71nC @ 10V
Power - Max
211W
Mounting Type
Through Hole
Package / Case
TO-220-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.3 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
211 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
PSMN2R8-40PS
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
Continuous current rating is limited by package.
(A)
200
150
100
I
D
50
0
mounting base temperature
Continuous drain current as a function of
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
(1)
50
100
150
All information provided in this document is subject to legal disclaimers.
T
003aad361
mb
(°C)
Rev. 01 — 1 November 2010
200
Conditions
T
T
V
V
pulsed; t
T
T
pulsed; t
V
V
j
j
mb
mb
GS
GS
GS
sup
≥ 25 °C; T
≥ 25 °C; T
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 40 V; unclamped; R
p
p
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
≤ 10 µs; T
≤ 10 µs; T
j
j
Fig 2.
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
= 100 °C; see
= 25 °C; see
P
Figure 2
(%)
= 25 °C; I
der
120
80
40
mb
mb
0
function of mounting base temperature
Normalized total power dissipation as a
0
= 25 °C; see
= 25 °C
GS
GS
D
= 20 kΩ
= 100 A;
= 50 Ω
Figure 1
Figure 1
50
Figure 3
PSMN2R8-40PS
100
[1]
[1]
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
150
© NXP B.V. 2010. All rights reserved.
T
mb
175
175
Max
40
40
20
100
100
797
211
100
797
407
03aa16
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
3 of 16