PSMN2R8-40PS,127 NXP Semiconductors, PSMN2R8-40PS,127 Datasheet - Page 9
![MOSFET N-CH 40V SOT78](/photos/16/7/160729/to220ab_sml.jpg)
PSMN2R8-40PS,127
Manufacturer Part Number
PSMN2R8-40PS,127
Description
MOSFET N-CH 40V SOT78
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN2R8-40PS127.pdf
(16 pages)
Specifications of PSMN2R8-40PS,127
Input Capacitance (ciss) @ Vds
4491pF @ 20V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.8 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
71nC @ 10V
Power - Max
211W
Mounting Type
Through Hole
Package / Case
TO-220-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.3 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
211 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NXP Semiconductors
PSMN2R8-40PS
Product data sheet
Fig 11. Gate-source threshold voltage as a function of
Fig 13. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
1.5
0.5
5
4
3
2
1
0
2
1
0
−60
−60
junction temperature
factor as a function of junction temperature
0
0
60
60
max
min
typ
120
120
All information provided in this document is subject to legal disclaimers.
T
T
003aae992
j
j
( ° C)
(°C)
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Rev. 01 — 1 November 2010
180
180
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
Fig 12. Gate-source threshold voltage as a function of
Fig 14. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.4
1.6
1.2
0.8
0.4
5
4
3
2
1
0
2
0
−60
-60
junction temperature
factor as a function of junction temperature.
0
0
PSMN2R8-40PS
60
60
max
min
typ
120
120
© NXP B.V. 2010. All rights reserved.
003aad696
003aad280
T
T
j
j
(°C)
(°C)
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