PSMN2R8-40PS,127 NXP Semiconductors, PSMN2R8-40PS,127 Datasheet - Page 9

• Manufacturer Part Number: PSMN2R8-40PS,127
• Description: MOSFET N-CH 40V SOT78
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R8-40PS,127

• Input Capacitance (ciss) @ Vds: 4491pF @ 20V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 71nC @ 10V
• Power - Max: 211W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.3 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 211 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
PSMN2R8-40PS
Product data sheet
Fig 11. Gate-source threshold voltage as a function of
Fig 13. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
1.5
0.5
5
4
3
2
1
0
2
1
0
−60
−60
junction temperature
factor as a function of junction temperature
0
0
60
60
max
min
typ
120
120
All information provided in this document is subject to legal disclaimers.
T
T
003aae992
j
j
( ° C)
(°C)
03aa27
Rev. 01 — 1 November 2010
180
180
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
Fig 12. Gate-source threshold voltage as a function of
Fig 14. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.4
1.6
1.2
0.8
0.4
5
4
3
2
1
0
2
0
−60
-60
junction temperature
factor as a function of junction temperature.
0
0
PSMN2R8-40PS
60
60
max
min
typ
120
120
© NXP B.V. 2010. All rights reserved.
003aad696
003aad280
T
T
j
j
(°C)
(°C)
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180
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