BUK6E4R0-75C,127 NXP Semiconductors, BUK6E4R0-75C,127 Datasheet - Page 11

• Manufacturer Part Number: BUK6E4R0-75C,127
• Description: MOSFET N-CH TRENCH I2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6E4R0-75C,127

• Input Capacitance (ciss) @ Vds: 15450pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 234nC @ 10V
• Power - Max: 306W
• Mounting Type: *
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
8. Revision history
Table 7.
BUK6E4R0-75C
Product data sheet
Document ID
BUK6E4R0-75C v.2
Modifications:
BUK6E4R0-75C v.1
Revision history
Release date
20100830
20100709
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•
Status changed from objective to product.
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 30 August 2010
Data sheet status
Product data sheet
Objective data sheet
Change notice
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BUK6E4R0-75C
N-channel TrenchMOS FET
Supersedes
BUK6E4R0-75C v.1
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© NXP B.V. 2010. All rights reserved.
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