BUK6E4R0-75C,127 NXP Semiconductors, BUK6E4R0-75C,127 Datasheet - Page 2

• Manufacturer Part Number: BUK6E4R0-75C,127
• Description: MOSFET N-CH TRENCH I2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6E4R0-75C,127

• Input Capacitance (ciss) @ Vds: 15450pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 234nC @ 10V
• Power - Max: 306W
• Mounting Type: *
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK6E4R0-75C
Product data sheet
Pin
1
2
3
mb
Type number
BUK6E4R0-75C
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Table 1.
[1]
Package
Name
I2PAK
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
DS(AL)S
GD
Continuous current is limited by package.
Quick reference data
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge
Description
plastic single-ended package (I2PAK); TO-262
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 30 August 2010
Simplified outline
SOT226 (I2PAK)
…continued
Conditions
I
R
T
I
V
see
D
D
j(init)
GS
GS
= 120 A; V
= 25 A; V
1
mb
Figure 14
= 10 V; see
= 50 Ω; V
2
= 25 °C; unclamped
3
DS
sup
GS
= 60 V;
≤ 75 V;
Figure
= 10 V;
Graphic symbol
13;
BUK6E4R0-75C
N-channel TrenchMOS FET
mbb076
G
Min
-
-
© NXP B.V. 2010. All rights reserved.
D
S
Typ
-
63
Version
SOT226
Max Unit
523
-
2 of 14
mJ
nC