BUK6E4R0-75C,127 NXP Semiconductors, BUK6E4R0-75C,127 Datasheet - Page 7

• Manufacturer Part Number: BUK6E4R0-75C,127
• Description: MOSFET N-CH TRENCH I2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6E4R0-75C,127

• Input Capacitance (ciss) @ Vds: 15450pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 234nC @ 10V
• Power - Max: 306W
• Mounting Type: *
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
Table 6.
BUK6E4R0-75C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
R
(mΩ)
(A)
I
DSon
D
160
120
80
40
20
15
10
0
5
0
function of drain-source voltage; typical values
of gate-source voltage; typical values.
T
Output characteristics: drain current as a
T
Drain-source on-state resistance as a function
0
0
j
j
Characteristics
= 25 °C; t
= 25 °C; I
10
5
Parameter
source-drain voltage
reverse recovery time
recovered charge
4.5
p
D
= 300 μs
1
= 25 A
4
…continued
2
8
V
GS
V
V
(V) =
All information provided in this document is subject to legal disclaimers.
GS
DS
003aae383
003aae377
(V)
(V)
3.6
3.4
3.3
3.2
4.0
3.8
Rev. 02 — 30 August 2010
12
Conditions
I
see
I
V
3
S
S
GS
= 25 A; V
= 20 A; dI
Figure 16
= 0 V; V
GS
S
DS
/dt = -100 A/µs;
Fig 6.
Fig 8.
= 0 V; T
= 25 V
(A)
(S)
g
I
D
fs
250
200
150
100
100
50
80
60
40
20
0
0
function of gate-source voltage; typical values
drain current; typical values
V
Transfer characteristics: drain current as a
Forward transconductance as a function of
0
j
0
DS
= 25 °C;
< I
D
x R
25
1
DSon
BUK6E4R0-75C
T j = 175 °C
Min
-
-
-
N-channel TrenchMOS FET
50
2
Typ
0.8
72
218
75
3
© NXP B.V. 2010. All rights reserved.
V
003aae379
003aae378
GS
I
D
25 °C
(A)
Max
1.2
-
-
(V)
100
4
Unit
V
ns
nC
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