BUK6E4R0-75C,127 NXP Semiconductors, BUK6E4R0-75C,127 Datasheet - Page 4

• Manufacturer Part Number: BUK6E4R0-75C,127
• Description: MOSFET N-CH TRENCH I2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6E4R0-75C,127

• Input Capacitance (ciss) @ Vds: 15450pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 234nC @ 10V
• Power - Max: 306W
• Mounting Type: *
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK6E4R0-75C
Product data sheet
Fig 1.
Fig 3.
(A)
(A)
I
I
D
D
10
10
10
200
150
100
10
50
-1
3
2
1
0
10
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
50
(1)
100
Limit R
1
DSon
150
= V
All information provided in this document is subject to legal disclaimers.
T
003aae374
mb
DS
(°C)
/ I
D
200
Rev. 02 — 30 August 2010
DC
10
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
50
10
BUK6E4R0-75C
10 ms
2
100 μ s
1 ms
100 ms
t
p
=10 μ s
100
N-channel TrenchMOS FET
V
DS
(V)
150
© NXP B.V. 2010. All rights reserved.
T
003aae376
mb
03aa16
(°C)
10
200
3
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