BLF6G10L-40BRN,118 NXP Semiconductors, BLF6G10L-40BRN,118 Datasheet - Page 3

• Manufacturer Part Number: BLF6G10L-40BRN,118
• Description: TRANS LDMOS SOT1110A3/B3
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10L-40BRN,118

• Voltage - Rated: 65V
• Transistor Type: LDMOS (Dual)
• Frequency: *
• Gain: 23dB
• Current Rating: 11A
• Current - Test: *
• Voltage - Test: 28V
• Power - Output: 2.5W
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
6. Characteristics
7. Application information
BLF6G10L-40BRN
Product data sheet
7.1 Ruggedness in class-AB operation
Table 6.
T
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on CCDF;
3GPP test model 1; 64 DPCH; f
RF performance at V
class AB production test circuit.
Table 8.
Mode of operation; 1-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on CCDF;
3GPP test model 1; 64 DPCH; f = 821 MHz; RF performance at V
T
The BLF6G10L-40BRN is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
I
Symbol
V
V
I
I
I
I
g
R
Symbol
P
G
RL
ACPR
Symbol Parameter
PAR
η
Dq
Dq
DSS
DSX
GSS
j
case
fs
D
(BR)DSS
GS(th)
L(AV)
DS(on)
p
= 25
in
= 390 mA; P
= 25
°
C per section; unless otherwise specified
peak-to-average ratio
°
Parameter
drain-source breakdown voltage
gate-source threshold voltage
quiescent drain current
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
C; unless otherwise specified in a class AB production test circuit.
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
Characteristics
Application information
Application information
All information provided in this document is subject to legal disclaimers.
L
= 32 W; f = 791 MHz and 821 MHz.
DS
Rev. 3 — 16 November 2010
= 28 V; I
1
Dq(nom)
= 788.5 MHz; f
Conditions
P
probability on CCDF
L(AV)
= 390 mA; T
= 10 W at 0.01 %
Conditions
V
V
sense transistor:
main transistor:
V
V
V
V
V
V
I
Conditions
P
P
P
P
D
2
GS
DS
GS
GS
DS
GS
DS
GS
L(AV)
L(AV)
L(AV)
L(AV)
I
V
V
= 2.063 A
= 793.5 MHz; f
DS
DS
DS
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
case
= 8.2 mA;
= 26.5 V
= 28 V
= 2.5 W
= 2.5 W
= 2.5 W
= 2.5 W
GS(th)
GS(th)
BLF6G10L-40BRN
= 25
D
DS
D
D
= 0.5 mA
+ 3.75 V;
DS
+ 3.75 V;
°
= 59 mA
= 2.9 A
C; unless otherwise specified in a
= 28 V
= 0 V
3
DS
Min
5.5
= 818.5 MHz; f
= 28 V; I
Min
-
22
-
13
-
Power LDMOS transistor
Typ
5.9
Min
65
1.4
340
-
8.8
-
2.7
0.09 0.25 0.39 Ω
DS
Typ
2.5
23.0
−15
15
−42.5
Dq(nom)
= 28 V;
© NXP B.V. 2010. All rights reserved.
4
Typ
-
1.9
390
-
10
-
4.3
= 823.5 MHz;
Max
-
= 390 mA;
Max
-
-
−10
-
−38
Max Unit
-
2.4
440
1.4
-
140
-
Unit
dB
Unit
W
dB
dB
%
dBc
3 of 11
V
V
mA
μA
A
nA
S