BLF6G10L-40BRN,118 NXP Semiconductors, BLF6G10L-40BRN,118 Datasheet - Page 5

• Manufacturer Part Number: BLF6G10L-40BRN,118
• Description: TRANS LDMOS SOT1110A3/B3
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10L-40BRN,118

• Voltage - Rated: 65V
• Transistor Type: LDMOS (Dual)
• Frequency: *
• Gain: 23dB
• Current Rating: 11A
• Current - Test: *
• Voltage - Test: 28V
• Power - Output: 2.5W
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
BLF6G10L-40BRN
Product data sheet
Fig 4.
(dB)
G
(1) f = 791 MHz
(2) f = 821 MHz
p
25
24
23
22
21
20
0
3GPP; Test Model 1; 64 DPCH, PAR = 7.5 dB at
0.01 % probability per carrier; carrier spacing 5 MHz;
V
efficiency as function of output power;
typical values
2-carrier W-CDMA power gain and drain
DS
= 28 V; I
7.3.2 2-carrier W-CDMA (5 MHz spacing)
G
D
p
4
Dq
= 390 mA.
8
(1)
(2)
12
All information provided in this document is subject to legal disclaimers.
001aam482
P
L
(W)
Rev. 3 — 16 November 2010
16
50
40
30
20
10
0
(%)
D
Fig 5.
ACPR
(dBc)
(1) f = 791 MHz
(2) f = 821 MHz
10
20
30
40
50
60
0
3GPP; Test Model 1; 64 DPCH, PAR = 7.5 dB at
0.01 % probability per carrier; carrier spacing 5 MHz;
V
2-carrier W-CDMA adjacent channel power
ratio and peak aspect ratio as function of
output power; typical values
DS
= 28 V; I
ACPR
ACPR
PAR
BLF6G10L-40BRN
10M
5M
4
Dq
= 390 mA.
8
Power LDMOS transistor
(1)
(2)
(1)
(2)
12
© NXP B.V. 2010. All rights reserved.
001aam483
P
L
(W)
16
10
9
8
7
6
5
PAR
(dB)
5 of 11