BFG25AW/X,115 NXP Semiconductors, BFG25AW/X,115 Datasheet

TRANS RF NPN 5GHZ 5V SOT343

BFG25AW/X,115

Manufacturer Part Number
BFG25AW/X,115
Description
TRANS RF NPN 5GHZ 5V SOT343
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFG25AW/X,115

Package / Case
SOT-343N
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5V
Frequency - Transition
5GHz
Noise Figure (db Typ @ F)
1.9dB ~ 2dB @1GHz
Power - Max
500mW
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 500µA, 1V
Current - Collector (ic) (max)
6.5mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
50
Dc Current Gain Hfe Max
200
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
5 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
6.5 mA
Power Dissipation
500 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-6185-2
BFG25AW/X,115
Product specification
Supersedes data of August 1995
dbook, halfpage
DATA SHEET
BFG25AW; BFG25AW/X
NPN 5 GHz wideband transistors
M3D123
1998 Sep 23

Related parts for BFG25AW/X,115

BFG25AW/X,115 Summary of contents

Page 1

DATA SHEET dbook, halfpage BFG25AW; BFG25AW/X NPN 5 GHz wideband transistors Product specification Supersedes data of August 1995 M3D123 1998 Sep 23 ...

Page 2

... NXP Semiconductors NPN 5 GHz wideband transistors FEATURES  Low current consumption (100  mA)  Low noise figure  Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in UHF low power amplifiers, such as pocket telephones and paging systems. DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package ...

Page 3

... NXP Semiconductors NPN 5 GHz wideband transistors THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to soldering point T th j-s Note the temperature at the soldering point of the collector pin. s CHARACTERISTICS = 25 C unless otherwise specified SYMBOL PARAMETER V collector-base breakdown voltage (BR)CBO V collector-emitter breakdown voltage I ...

Page 4

... NXP Semiconductors NPN 5 GHz wideband transistors 600 handbook, halfpage P tot (mW) 400 200 100 Fig.2 Power derating curve. 0.3 handbook, halfpage C re (pF) 0.2 0 MHz. C Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. 1998 Sep 23 MBG248 handbook, halfpage h FE 150 200 Fig.3 ...

Page 5

... NXP Semiconductors NPN 5 GHz wideband transistors 30 handbook, halfpage gain (dB 500 MHz Fig.6 Gain as a function of collector current; typical values. 50 handbook, halfpage gain (dB MSG 0.5 mA Fig.8 Gain as a function of frequency; typical values. 1998 Sep 23 MLB973 handbook, halfpage gain (dB MSG (mA GHz; V MLB975 handbook, halfpage ...

Page 6

... NXP Semiconductors NPN 5 GHz wideband transistors 4 handbook, halfpage F (dB − Fig.10 Minimum noise figure as a function of collector current; typical values. handbook, full pagewidth 180 f = 500 MHz mA Fig.12 Common emitter noise figure circles; typical values. 1998 Sep 23 MCD145 handbook, halfpage GHz 1 GHz ...

Page 7

... NXP Semiconductors NPN 5 GHz wideband transistors handbook, full pagewidth 180 = 50  GHz mA Fig.13 Common emitter noise figure circles; typical values. handbook, full pagewidth unstable region 180 = 50  GHz mA Fig.14 Common emitter noise figure circles; typical values. 1998 Sep 135 ...

Page 8

... NXP Semiconductors NPN 5 GHz wideband transistors handbook, full pagewidth 180 = 50  mA Fig.15 Common emitter input reflection coefficient (S handbook, full pagewidth 180 mA Fig.16 Common emitter forward transmission coefficient (S 1998 Sep 135 0.5 0.2 0.2 0 GHz 0.2 0.5 o 135 135 40 MHz 135 ...

Page 9

... NXP Semiconductors NPN 5 GHz wideband transistors handbook, full pagewidth 180 mA Fig.17 Common emitter reverse transmission coefficient (S handbook, full pagewidth 180 = 50  mA Fig.18 Common emitter output reflection coefficient (S 1998 Sep 135 0.5 0.4 0.3 0.2 0.1 40 MHz o o 135 135 0.5 ...

Page 10

... NXP Semiconductors NPN 5 GHz wideband transistors SPICE parameters for the BFG25W crystal SEQUENCE No. PARAMETER VALUE VAF 5 IKF 6 ISE VAR 11 IKR 12 ISC IRB 16 RBM (1) 19 XTB ( (1) 21 XTI 22 CJE 23 VJE 24 MJE XTF 27 VTF 28 ITF 29 PTF 30 CJC 31 VJC 32 MJC 33 XCJC 34 TR (1) 35 CJS ...

Page 11

... NXP Semiconductors NPN 5 GHz wideband transistors PACKAGE OUTLINES Plastic surface-mounted package; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 0.4 1.1 0.7 mm 0.1 0.3 0.8 0.5 OUTLINE VERSION IEC SOT343N 1998 Sep scale 0.25 2.2 1.35 1.3 1.15 0.10 1.8 1.15 ...

Page 12

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 13

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 14

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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