BFG25AW/X,115 NXP Semiconductors, BFG25AW/X,115 Datasheet - Page 2

• Manufacturer Part Number: BFG25AW/X,115
• Description: TRANS RF NPN 5GHZ 5V SOT343
• Manufacturer: NXP Semiconductors

Specifications of BFG25AW/X,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 2dB @1GHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 500µA, 1V
• Current - Collector (ic) (max): 6.5mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Dc Current Gain Hfe Max: 200
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 5 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 6.5 mA
• Power Dissipation: 500 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-6185-2; BFG25AW/X,115

NXP Semiconductors
FEATURES
 Low current consumption
 Low noise figure
 Gold metallization ensures
APPLICATIONS
Wideband applications in UHF low
power amplifiers, such as pocket
telephones and paging systems.
DESCRIPTION
NPN silicon planar epitaxial transistor
in a 4-pin dual-emitter SOT343N
plastic package.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
1998 Sep 23
V
V
I
P
h
C
f
G
F
V
V
V
I
P
T
T
SYMBOL
SYMBOL
C
T
C
FE
(100 A to 1 mA)
excellent reliability.
stg
j
CBO
CEO
tot
CBO
CEO
EBO
tot
NPN 5 GHz wideband transistors
re
UM
s
is the temperature at the soldering point of the collector pin.
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
noise figure
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
open emitter
open base
T
I
I
I
I

C
C
C
C
PINNING
s
s
BFG25AW
BFG25AW/X
= 0.5 mA; V
= 0; V
= 1 mA; V
= 0.5 mA; V
 85 C
 
PIN
1
2
3
4
1
2
3
4
opt
; I
CE
open emitter
open base
open collector
T
C
s
= 1 V; f = 1 MHz
= 1 mA; V
collector
base
emitter
emitter
collector
emitter
base
emitter
CE
 85 C; see Fig.2; note 1
CE
CE
= 1 V; f = 500 MHz; T
CONDITIONS
= 1 V
= 1 V; f = 1 GHz; T
DESCRIPTION
2
CE
CONDITIONS
= 1 V; f = 1 GHz
amb
amb
= 25 C
= 25 C 3.5
lfpage
MARKING
BFG25AW
BFG25AW/X
TYPE NUMBER




50








65

MIN.
MIN.
Fig.1 SOT343N.
4
1
Top view
Product specification
BFG25AW/X




80
0.2
5
16
2
TYP. MAX. UNIT
BFG25AW;
8
5
2
6.5
500
+150
175
MAX.
8
5
6.5
500
200
0.3



3
2
CODE
MBK523
N6
V1
V
V
V
mA
mW
C
C
UNIT
V
V
mA
mW
pF
GHz
dB
dB