BFG25AW/X,115 NXP Semiconductors, BFG25AW/X,115 Datasheet - Page 4

• Manufacturer Part Number: BFG25AW/X,115
• Description: TRANS RF NPN 5GHZ 5V SOT343
• Manufacturer: NXP Semiconductors

Specifications of BFG25AW/X,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 2dB @1GHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 500µA, 1V
• Current - Collector (ic) (max): 6.5mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Dc Current Gain Hfe Max: 200
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 5 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 6.5 mA
• Power Dissipation: 500 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-6185-2; BFG25AW/X,115

NXP Semiconductors
1998 Sep 23
handbook, halfpage
handbook, halfpage
NPN 5 GHz wideband transistors
(mW)
I
C
P tot
C re
(pF)
= 0; f = 1 MHz.
Fig.4
600
400
200
0.3
0.2
0.1
0
0
0
0
Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.2 Power derating curve.
50
2
100
4
150
V
T
CE
s
MBG248
( C)
MLB971
(V)
o
200
6
4
handbook, halfpage
handbook, halfpage
V
f = 500 MHz; V
(GHz)
h FE
CE
Fig.3
T f
= 1 V.
100
Fig.5
80
60
40
20
4
0
6
2
0
10
0
3
DC current gain as a function of collector
current; typical values.
CE
Transition frequency as a function of
collector current; typical values.
= 1 V; T
BFG25AW; BFG25AW/X
10
1
2
amb
= 25 C.
10
2
1
Product specification
3
1
I
I
C
C
(mA)
(mA)
MCD138
MLB972
10
4