BFG25AW/X,115 NXP Semiconductors, BFG25AW/X,115 Datasheet - Page 3

• Manufacturer Part Number: BFG25AW/X,115
• Description: TRANS RF NPN 5GHZ 5V SOT343
• Manufacturer: NXP Semiconductors

Specifications of BFG25AW/X,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 2dB @1GHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 500µA, 1V
• Current - Collector (ic) (max): 6.5mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Dc Current Gain Hfe Max: 200
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 5 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 6.5 mA
• Power Dissipation: 500 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-6185-2; BFG25AW/X,115

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. T
CHARACTERISTICS
T
Note
1. G
1998 Sep 23
R
V
V
V
I
h
C
f
G
F
SYMBOL
SYMBOL
j
CBO
T
FE
= 25 C unless otherwise specified.
(BR)CBO
(BR)CEO
(BR)EBO
NPN 5 GHz wideband transistors
th j-s
re
UM
s
UM
is the temperature at the soldering point of the collector pin.
is the maximum unilateral power gain, assuming S
thermal resistance from junction to soldering point T
collector-base breakdown voltage
collector-emitter breakdown voltage I
emitter-base breakdown voltage
collector leakage current
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain;
note 1
noise figure
PARAMETER
PARAMETER
I
I
open emitter; V
I
I
I
T
I
f = 1 GHz; T
I
f = 2 GHz; T

f = 1 GHz

f = 1 GHz
C
C
E
C
C
C
C
C
amb
s
s
= 100 A; I
= 100 A; I
= 1 mA; I
= 0.5 mA; V
= 0; V
= 1 mA; V
= 0.5 mA; V
= 0.5 mA; V
 
 
= 25 C
opt
opt
; I
; I
CE
3
12
CONDITIONS
C
C
= 1 V; f = 1 MHz
B
is zero.
= 0.5 mA; V
= 1 mA; V
amb
amb
CE
= 0
C
E
CE
CE
CE
= 0
= 0
CB
s
= 1 V; f = 1 GHz;
= 25 C
= 25 C
 85 C; note 1
= 1 V
= 1 V;
= 1 V;
= 5 V; I
G
CONDITIONS
CE
UM
CE
= 1 V;
E
=
= 1 V;
= 0
10
BFG25AW; BFG25AW/X
log
---------------------------------------------------------- dB.





50

3.5




1
MIN.
–
S
11




80
0.2
5
16
8
1.9
2
S
2
TYP.
 1
21
VALUE

180
Product specification
2
–
S
8
5
2
50
200
0.3




22
MAX.
2

UNIT
K/W
V
V
V
nA
pF
GHz
dB
dB
dB
dB
UNIT