BFR94A,215 NXP Semiconductors, BFR94A,215 Datasheet - Page 3

• Manufacturer Part Number: BFR94A,215
• Description: TRANS NPN 5GHZ TO-236AB
• Manufacturer: NXP Semiconductors

Specifications of BFR94A,215

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2.1dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 65 @ 15mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 25 mA
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 65
• Gain Bandwidth Product Ft: 5 GHz
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Details

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
Table 7.
[1]
[2]
[3]
[4]
BFR94A
Product data sheet
Symbol
I
h
C
C
C
f
G
NF
V
IMD2
CBO
T
FE
O
c
e
re
UM
G
Measured on the same crystal in a SOT37 package (BFR90A).
IMD = −60 dB (DIN 45004B); I
V
V
V
measured at f
I
V
V
measured at f
C
G
p
q
r
p
q
UM
= 14 mA; V
= V
UM
= V
= V
= 60 mV at f
= 60 mV at f
is the maximum unilateral power gain, assuming S
O
O
O
=
−6 dB at f
Characteristics
at IMD = −60 dB; f
−6 dB at f
Parameter
collector-base cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
unilateral power gain
noise figure
output voltage
second-order intermodulation
distortion
10
log
CE
p
p
+ f
p
p
+ f
= 10 V; R
= 250 MHz;
= 560 MHz;
------------------------------------------------------- - dB.
(
r
q
q
1
q
= 805.25 MHz;
− f
= 810 MHz
= 803.25 MHz;
–
r
S
Table 6.
[1]
= 793.25 MHz
Symbol
R
11
th(j-sp)
L
2
S
p
= 75 Ω; VSWR < 2; T
) 1
21
T
= 795.25 MHz;
(
sp
C
2
–
is the temperature at the solder point of the collector pin.
= 14 mA; V
S
22
Thermal characteristics
Parameter
thermal resistance from junction to
solder point
2
)
All information provided in this document is subject to legal disclaimers.
CE
= 10 V; R
Conditions
I
I
I
see
I
I
I
see
I
I
T
see
see
amb
E
C
E
C
C
C
C
C
amb
Rev. 3 — 15 November 2010
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
= 0 A; V
= i
= 15 mA; V
= i
= i
= 15 mA; V
= 15 mA; V
= 5 mA; V
= 25 °C;
Figure 4
Figure 5
Figure 12
Figure 15
e
c
c
= 25 °C;
12
= 0 A; V
= 0 A; V
= 0 mA; V
L
= 75 Ω; VSWR < 2; T
is zero and
CB
CE
= 10 V
CE
CE
CE
and
CB
EB
= 10 V; Γ
CE
= 10 V; f = 500 MHz;
= 10 V; T
= 10 V; see
= 10 V; f = 1 MHz
= 10 V; f = 1 MHz:
Figure 13
= 10 V; f = 1 MHz
S
amb
Conditions
T
= Γ
amb
sp
Figure 3
opt
= 25 °C
≤ 95 °C
= 25 °C;
;
NPN 5 GHz wideband transistor
[2][3]
[2][4]
[1]
Min
-
65
-
-
-
-
-
-
-
-
-
-
Typ
-
90
0.6
1.2
0.35
5
14
8
2.1
3
150
−50
© NXP B.V. 2010. All rights reserved.
[1]
BFR94A
Typ
260
Max
50
135
-
-
-
-
-
-
-
-
-
-
Unit
K/W
Unit
nA
pF
pF
pF
GHz
dB
dB
dB
dB
mV
dB
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