BFR94A,215 NXP Semiconductors, BFR94A,215 Datasheet - Page 7

• Manufacturer Part Number: BFR94A,215
• Description: TRANS NPN 5GHZ TO-236AB
• Manufacturer: NXP Semiconductors

Specifications of BFR94A,215

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2.1dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 65 @ 15mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 25 mA
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 65
• Gain Bandwidth Product Ft: 5 GHz
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Details

NXP Semiconductors
BFR94A
Product data sheet
Fig 12. Minimum noise figure as a function of
Fig 14. Intermodulation distortion as a function of
(dB)
IMD
(dB)
NF
−45
−50
−55
−60
−65
−70
4
3
2
1
0
10
1
V
collector current; typical values
V
collector current; typical values
CE
CE
= 10 V.
= 10 V.
14
18
10
22
1 GHz
500 MHz
f = 2 GHz
I
C
(mA)
26
All information provided in this document is subject to legal disclaimers.
001aam894
001aam896
I
C
(mA)
Rev. 3 — 15 November 2010
10
30
2
Fig 13. Minimum noise figure as a function of
Fig 15. Second-order intermodulation distortion as a
IMD2
(dB)
(dB)
NF
−35
−40
−45
−50
−55
−60
4
3
2
1
0
10
10
V
frequency; typical values
V
function of collector current; typical values
2
CE
CE
= 10 V.
= 10 V.
14
NPN 5 GHz wideband transistor
18
10
3
22
10 mA
5 mA
I
f (MHz)
C
= 15 mA
© NXP B.V. 2010. All rights reserved.
26
BFR94A
001aam895
001aam897
I
C
(mA)
10
30
4
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