BFR94A,215 NXP Semiconductors, BFR94A,215 Datasheet - Page 5

• Manufacturer Part Number: BFR94A,215
• Description: TRANS NPN 5GHZ TO-236AB
• Manufacturer: NXP Semiconductors

Specifications of BFR94A,215

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2.1dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 65 @ 15mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 25 mA
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 65
• Gain Bandwidth Product Ft: 5 GHz
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Details

NXP Semiconductors
BFR94A
Product data sheet
Fig 4.
Fig 6.
(pF)
gain
(dB)
C
C
1.0
0.8
0.6
0.4
0.2
30
20
10
0
0
0
I
collector-base voltage; typical values
0
V
MSG = maximum stable gain.
Gain as a function of collector current; typical
values
Collector capacitance as a function of
C
CE
= i
= 10 V; f = 500 MHz.
C
= 0 mA; f = 1 MHz; T
5
5
10
10
15
j
= 25 °C.
15
MSG
G
20
All information provided in this document is subject to legal disclaimers.
UM
001aam888
V
001aam886
I
CB
C
(mA)
(V)
Rev. 3 — 15 November 2010
20
25
Fig 5.
Fig 7.
(GHz)
gain
(dB)
f
T
30
20
10
6
4
2
0
0
0
0
V
Transition frequency as a function of collector
current; typical values
V
MSG = maximum stable gain.
Gain as a function of collector current; typical
values
CE
CE
= 10 V; f = 500 MHz; T
= 10 V; f = 500 MHz.
5
10
NPN 5 GHz wideband transistor
10
15
amb
20
MSG
G
= 25 °C.
UM
I
© NXP B.V. 2010. All rights reserved.
C
20
BFR94A
001aam889
001aam887
(mA)
I
C
(mA)
30
25
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