BFR94A,215 NXP Semiconductors, BFR94A,215 Datasheet - Page 6

• Manufacturer Part Number: BFR94A,215
• Description: TRANS NPN 5GHZ TO-236AB
• Manufacturer: NXP Semiconductors

Specifications of BFR94A,215

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2.1dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 65 @ 15mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 25 mA
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 65
• Gain Bandwidth Product Ft: 5 GHz
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Details

NXP Semiconductors
BFR94A
Product data sheet
Fig 8.
Fig 10. Circles of constant noise figure; typical values
(mS)
gain
(dB)
B
S
−20
−40
50
40
30
20
10
40
20
0
0
10
I
MSG = maximum stable gain.
G
Gain as a function of frequency; typical values
0
I
C
C
max
= 5 mA; V
= 4 mA; V
= maximum available gain.
1.7
MSG
20
CE
CE
1.8
10
= 10 V.
= 10 V; f = 800 MHz.
2
2.0
G
UM
40
2.5
NF = 3.0 dB
10
3
60
f (MHz)
All information provided in this document is subject to legal disclaimers.
G
G
001aam890
001aam892
S
max
(mS)
Rev. 3 — 15 November 2010
10
80
4
Fig 9.
Fig 11. Circles of constant noise figure; typical values
(mS)
gain
(dB)
B
S
−10
−30
50
40
30
20
10
30
10
0
10
0
I
MSG = maximum stable gain.
G
Minimum noise figure as a function of
frequency; typical values
I
C
C
max
= 5 mA; V
= 14 mA; V
= maximum available gain.
MSG
2.4
CE
G
CE
10
20
UM
= 10 V.
NPN 5 GHz wideband transistor
2
= 10 V; f = 800 MHz.
2.5
3.0
10
40
3
NF = 3.5 dB
G
G
© NXP B.V. 2010. All rights reserved.
f (MHz)
max
BFR94A
S
001aam891
001aam893
(mS)
10
60
4
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