BFU630F,115 NXP Semiconductors, BFU630F,115 Datasheet

TRANSISTOR NPN SOT343F

BFU630F,115

Manufacturer Part Number
BFU630F,115
Description
TRANSISTOR NPN SOT343F
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFU630F,115

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5.5V
Frequency - Transition
21GHz
Noise Figure (db Typ @ F)
0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz
Gain
13dB ~ 22.5dB
Power - Max
200mW
Dc Current Gain (hfe) (min) @ Ic, Vce
90 @ 5mA, 2V
Current - Collector (ic) (max)
30mA
Mounting Type
Surface Mount
Package / Case
SOT-343F
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
5.5 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
3 mA
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
90
Gain Bandwidth Product Ft
21 GHz
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
1. Product profile
CAUTION
1.1 General description
1.2 Features and benefits
1.3 Applications
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin
dual-emitter SOT343F package.
BFU630F
NPN wideband silicon RF transistor
Rev. 1 — 15 December 2010
Low noise high gain microwave transistor
Noise figure (NF) = 0.85 dB at 2.4 GHz
High maximum stable gain 26 dB at 1.8 GHz
40 GHz f
Low noise amplifiers for microwave communications systems
WLAN and CDMA applications
Analog/digital cordless applications
Ku band oscillators DRO’s
LNB
RKE
AMR
GPS
ZigBee
LTE, cellular, UMTS
FM radio
Mobile TV
Bluetooth
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
T
silicon technology
Product data sheet

Related parts for BFU630F,115

BFU630F,115 Summary of contents

Page 1

BFU630F NPN wideband silicon RF transistor Rev. 1 — 15 December 2010 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive ...

Page 2

... NXP Semiconductors 1.4 Quick reference data Table 1. Symbol Parameter V CBO V CEO V EBO tot CBS p(max L(1dB) [ the temperature at the solder point of the emitter lead. sp [2] G p(max) 2. Pinning information Table 2. Pin Ordering information Table 3. Type number BFU630F BFU630F Product data sheet Quick reference data ...

Page 3

... NXP Semiconductors 4. Marking Table 4. Type number BFU630F 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot T stg the temperature at the solder point of the emitter lead Thermal characteristics Table 6. Symbol R th(j-sp) Fig 1. ...

Page 4

... NXP Semiconductors 7. Characteristics Table 7. Characteristics  unless otherwise specified j Symbol Parameter V collector-base breakdown voltage (BR)CBO V collector-emitter breakdown voltage (BR)CEO I collector current C I collector-base cut-off current CBO h DC current gain FE C collector-emitter capacitance CES C emitter-base capacitance EBS C collector-base capacitance CBS f transition frequency ...

Page 5

... NXP Semiconductors Table 7. Characteristics …continued  unless otherwise specified j Symbol Parameter IP3 third-order intercept point [ the maximum power gain > < 1 then G p(max (2) (mA) (3) 20 (4) (5) 15 (6) (7) 10 (8) (9) 5 (10 C. T amb = 200 A ( 180 A ( 160 A ( 140 A ( 120 A ...

Page 6

... NXP Semiconductors 80 C CBS (fF  MHz, T amb Fig 4. Collector-base capacitance as a function of collector-base voltage; typical values = 25  amb ( 1.5 GHz ( 1.8 GHz ( 2.4 GHz ( 5.8 GHz Fig 6. Gain as a function of collector current; typical value BFU630F Product data sheet 001aam815 fT (GHz (V) CB Fig 5 ...

Page 7

... NXP Semiconductors 50 G (dB MSG 20 G p(max) 2 |S21 mA amb Fig 7. Gain as a function of frequency; typical values 2.0 NF min (dB) 1.6 1.2 0.8 0  amb ( 5.8 GHz ( 2.4 GHz ( 1.8 GHz ( 1.5 GHz Fig 9. Minimum noise figure as a function of collector current; typical values BFU630F ...

Page 8

... NXP Semiconductors 8. Package outline Plastic surface-mounted flat pack package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions) A UNIT max 0.75 0.4 0.7 0.25 mm 0.65 0.3 0.5 0.10 OUTLINE VERSION IEC SOT343F Fig 11. Package outline SOT343F BFU630F Product data sheet scale 2.2 1 ...

Page 9

... NXP Semiconductors 9. Abbreviations Table 8. Acronym AMR CDMA DC DRO FM GPS LNA LNB LTE NPN RF RKE UMTS WLAN 10. Revision history Table 9. Revision history Document ID Release date BFU630F v.1 20101215 BFU630F Product data sheet Abbreviations Description Automatic Meter Reading Code Division Multiple Access Direct Current ...

Page 10

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...

Page 11

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any 12. Contact information For more information, please visit: ...

Page 12

... NXP Semiconductors 13. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 2 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 3 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 11 Legal information ...

Related keywords