BFU630F,115 NXP Semiconductors, BFU630F,115 Datasheet - Page 4

• Manufacturer Part Number: BFU630F,115
• Description: TRANSISTOR NPN SOT343F
• Manufacturer: NXP Semiconductors

Specifications of BFU630F,115

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5.5V
• Frequency - Transition: 21GHz
• Noise Figure (db Typ @ F): 0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz
• Gain: 13dB ~ 22.5dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 90 @ 5mA, 2V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: SOT-343F
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 5.5 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 3 mA
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 90
• Gain Bandwidth Product Ft: 21 GHz
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
7. Characteristics
Table 7.
T
BFU630F
Product data sheet
Symbol
V
V
I
I
h
C
C
C
f
G
s
NF
G
P
C
CBO
T
j
FE
(BR)CBO
(BR)CEO
21
L(1dB)
CES
EBS
CBS
p(max)
ass
= 25

2

C unless otherwise specified
Parameter
collector-base breakdown voltage
collector-emitter breakdown voltage
collector current
collector-base cut-off current
DC current gain
collector-emitter capacitance
emitter-base capacitance
collector-base capacitance
transition frequency
maximum power gain
insertion power gain
noise figure
associated gain
output power at 1 dB gain compression
Characteristics
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 15 December 2010
Conditions
I
I
I
I
V
V
V
I
T
I
I
I
T
I
T
I
Z
C
C
E
C
C
C
C
C
C
C
amb
amb
amb
S
CB
EB
CB
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
= 0 mA; V
= 2.5 A; I
= 1 mA; I
= 5 mA; V
= 10 mA; V
= 15 mA; V
= 15 mA; V
= 3 mA; V
= 3 mA; V
= 30 mA; V
= Z
= 0.5 V; f = 1 MHz
= 2 V; f = 1 MHz
= 2 V; f = 1 MHz
= 25 C
= 25 C
= 25 C
L
= 50 ; T
B
CB
CE
CE
CE
E
= 0 mA
CE
CE
CE
CE
= 0 mA
= 8 V
= 2 V
= 2 V; 
= 2 V; 
= 2 V; f = 2 GHz;
= 2 V; T
= 2 V; T
= 2.5 V;
amb
= 25 C
S
S
amb
amb
= 
= 
NPN wideband silicon RF transistor
= 25 C
= 25 C
opt
opt
;
;
[1]
Min Typ
16
5.5
-
-
90
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BFU630F
© NXP B.V. 2010. All rights reserved.
-
-
3
-
135
264
332
47
21
27
26
24.5
16
22.5
21
19
12
0.75
0.80
0.85
1.30
22.5
21
19
13
12.5
12.5
11.5
12.5
Max Unit
-
-
30
100
180
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4 of 12
V
V
mA
nA
fF
fF
fF
GHz
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm