BFU630F,115 NXP Semiconductors, BFU630F,115 Datasheet - Page 9

• Manufacturer Part Number: BFU630F,115
• Description: TRANSISTOR NPN SOT343F
• Manufacturer: NXP Semiconductors

Specifications of BFU630F,115

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5.5V
• Frequency - Transition: 21GHz
• Noise Figure (db Typ @ F): 0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz
• Gain: 13dB ~ 22.5dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 90 @ 5mA, 2V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: SOT-343F
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 5.5 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 3 mA
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 90
• Gain Bandwidth Product Ft: 21 GHz
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
9. Abbreviations
10. Revision history
Table 9.
BFU630F
Product data sheet
Document ID
BFU630F v.1
Revision history
Table 8.
Acronym
AMR
CDMA
DC
DRO
FM
GPS
LNA
LNB
LTE
NPN
RF
RKE
UMTS
WLAN
Release date
20101215
Abbreviations
All information provided in this document is subject to legal disclaimers.
Description
Automatic Meter Reading
Code Division Multiple Access
Direct Current
Dielectric Resonator Oscillator
Frequency Modulation
Global Positioning System
Low Noise Amplifier
Low Noise Block
Long Term Evolution
Negative-Positive-Negative
Radio Frequency
Remote Keyless Entry
Universal Mobile Telecommunications System
Wireless Local Area Network
Data sheet status
Product data sheet
Rev. 1 — 15 December 2010
Change notice
-
NPN wideband silicon RF transistor
Supersedes
-
BFU630F
© NXP B.V. 2010. All rights reserved.
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