BFU660F,115 NXP Semiconductors, BFU660F,115 Datasheet

TRANSISTOR NPN SOT343F

BFU660F,115

Manufacturer Part Number
BFU660F,115
Description
TRANSISTOR NPN SOT343F
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFU660F,115

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5.5V
Frequency - Transition
21GHz
Noise Figure (db Typ @ F)
0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz
Gain
12dB ~ 21dB
Power - Max
225mW
Dc Current Gain (hfe) (min) @ Ic, Vce
90 @ 10mA, 2V
Current - Collector (ic) (max)
60mA
Mounting Type
Surface Mount
Package / Case
SOT-343F
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
5.5 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
30 mA
Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
90
Gain Bandwidth Product Ft
21 GHz
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
1. Product profile
CAUTION
1.1 General description
1.2 Features and benefits
1.3 Applications
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin
dual-emitter SOT343F package.
BFU660F
NPN wideband silicon RF transistor
Rev. 1 — 11 January 2011
Low noise high linearity RF transistor
High output third-order intercept point 27 dBm at 1.8 GHz
40 GHz f
Analog/digital cordless applications
X-band high output buffer amplifier
ZigBee
SDARS second stage LNA
LTE, cellular, UMTS
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
T
silicon technology
Product data sheet

Related parts for BFU660F,115

BFU660F,115 Summary of contents

Page 1

BFU660F NPN wideband silicon RF transistor Rev. 1 — 11 January 2011 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive ...

Page 2

... NXP Semiconductors 1.4 Quick reference data Table 1. Symbol V CBO V CEO V EBO tot CBS f T IP3 O G p(max L(1dB) [ the temperature at the solder point of the emitter lead. sp [2] G p(max) 2. Pinning information Table 2. Pin Ordering information Table 3. Type number BFU660F BFU660F Product data sheet ...

Page 3

... NXP Semiconductors 4. Marking Table 4. Type number BFU660F 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot T stg the temperature at the solder point of the emitter lead Thermal characteristics Table 6. Symbol R th(j-sp) Fig 1. ...

Page 4

... NXP Semiconductors 7. Characteristics Table 7. Characteristics ° unless otherwise specified j Symbol Parameter V collector-base breakdown voltage (BR)CBO V collector-emitter breakdown voltage (BR)CEO I collector current C I collector-base cut-off current CBO h DC current gain FE C collector-emitter capacitance CES C emitter-base capacitance EBS C collector-base capacitance CBS f transition frequency ...

Page 5

... NXP Semiconductors Table 7. Characteristics …continued ° unless otherwise specified j Symbol Parameter IP3 output third-order intercept point O [ the maximum power gain > < 1 then G p(max (mA °C. T amb = 400 μA ( 350 μA ( 300 μA ( 250 μA ( 200 μA ( 150 μA ( 100 μA ( μA ( Fig 2. ...

Page 6

... NXP Semiconductors 200 C CBS (fF) 160 120 ° MHz, T amb Fig 4. Collector-base capacitance as a function of collector-base voltage; typical values = 25 ° amb ( 1.5 GHz ( 1.8 GHz ( 2.4 GHz ( 5.8 GHz ( GHz Fig 6. Gain as a function of collector current; typical value BFU660F Product data sheet ...

Page 7

... NXP Semiconductors 40 G (dB) 30 MSG 20 2 |S21 mA amb Fig 7. Gain as a function of frequency; typical values 3 NF min (dB ° amb ( 5.8 GHz ( 2.4 GHz ( 1.8 GHz ( 1.5 GHz Fig 9. Minimum noise figure as a function of collector current; typical values BFU660F Product data sheet ...

Page 8

... NXP Semiconductors 8. Package outline Plastic surface-mounted flat pack package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions) A UNIT max 0.75 0.4 0.7 0.25 mm 0.65 0.3 0.5 0.10 OUTLINE VERSION IEC SOT343F Fig 11. Package outline SOT343F BFU660F Product data sheet scale 2.2 1 ...

Page 9

... NXP Semiconductors 9. Abbreviations Table 8. Acronym DC LNA LTE NPN RF SDARS UMTS 10. Revision history Table 9. Revision history Document ID Release date BFU660F v.1 20110111 BFU660F Product data sheet Abbreviations Description Direct Current Low Noise Amplifier Long Term Evolution Negative-Positive-Negative Radio Frequency Satellite Digital Audio Radio Service ...

Page 10

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...

Page 11

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any 12. Contact information For more information, please visit: ...

Page 12

... NXP Semiconductors 13. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 2 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 3 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 11 Legal information ...

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