BFU660F,115 NXP Semiconductors, BFU660F,115 Datasheet
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BFU660F,115
Specifications of BFU660F,115
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BFU660F,115 Summary of contents
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BFU660F NPN wideband silicon RF transistor Rev. 1 — 11 January 2011 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive ...
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... NXP Semiconductors 1.4 Quick reference data Table 1. Symbol V CBO V CEO V EBO tot CBS f T IP3 O G p(max L(1dB) [ the temperature at the solder point of the emitter lead. sp [2] G p(max) 2. Pinning information Table 2. Pin Ordering information Table 3. Type number BFU660F BFU660F Product data sheet ...
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... NXP Semiconductors 4. Marking Table 4. Type number BFU660F 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot T stg the temperature at the solder point of the emitter lead Thermal characteristics Table 6. Symbol R th(j-sp) Fig 1. ...
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... NXP Semiconductors 7. Characteristics Table 7. Characteristics ° unless otherwise specified j Symbol Parameter V collector-base breakdown voltage (BR)CBO V collector-emitter breakdown voltage (BR)CEO I collector current C I collector-base cut-off current CBO h DC current gain FE C collector-emitter capacitance CES C emitter-base capacitance EBS C collector-base capacitance CBS f transition frequency ...
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... NXP Semiconductors Table 7. Characteristics …continued ° unless otherwise specified j Symbol Parameter IP3 output third-order intercept point O [ the maximum power gain > < 1 then G p(max (mA °C. T amb = 400 μA ( 350 μA ( 300 μA ( 250 μA ( 200 μA ( 150 μA ( 100 μA ( μA ( Fig 2. ...
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... NXP Semiconductors 200 C CBS (fF) 160 120 ° MHz, T amb Fig 4. Collector-base capacitance as a function of collector-base voltage; typical values = 25 ° amb ( 1.5 GHz ( 1.8 GHz ( 2.4 GHz ( 5.8 GHz ( GHz Fig 6. Gain as a function of collector current; typical value BFU660F Product data sheet ...
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... NXP Semiconductors 40 G (dB) 30 MSG 20 2 |S21 mA amb Fig 7. Gain as a function of frequency; typical values 3 NF min (dB ° amb ( 5.8 GHz ( 2.4 GHz ( 1.8 GHz ( 1.5 GHz Fig 9. Minimum noise figure as a function of collector current; typical values BFU660F Product data sheet ...
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... NXP Semiconductors 8. Package outline Plastic surface-mounted flat pack package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions) A UNIT max 0.75 0.4 0.7 0.25 mm 0.65 0.3 0.5 0.10 OUTLINE VERSION IEC SOT343F Fig 11. Package outline SOT343F BFU660F Product data sheet scale 2.2 1 ...
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... NXP Semiconductors 9. Abbreviations Table 8. Acronym DC LNA LTE NPN RF SDARS UMTS 10. Revision history Table 9. Revision history Document ID Release date BFU660F v.1 20110111 BFU660F Product data sheet Abbreviations Description Direct Current Low Noise Amplifier Long Term Evolution Negative-Positive-Negative Radio Frequency Satellite Digital Audio Radio Service ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any 12. Contact information For more information, please visit: ...
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... NXP Semiconductors 13. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 2 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 3 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 11 Legal information ...