BFU660F,115 NXP Semiconductors, BFU660F,115 Datasheet - Page 9

• Manufacturer Part Number: BFU660F,115
• Description: TRANSISTOR NPN SOT343F
• Manufacturer: NXP Semiconductors

Specifications of BFU660F,115

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5.5V
• Frequency - Transition: 21GHz
• Noise Figure (db Typ @ F): 0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz
• Gain: 12dB ~ 21dB
• Power - Max: 225mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 90 @ 10mA, 2V
• Current - Collector (ic) (max): 60mA
• Mounting Type: Surface Mount
• Package / Case: SOT-343F
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 5.5 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 30 mA
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 90
• Gain Bandwidth Product Ft: 21 GHz
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
9. Abbreviations
10. Revision history
Table 9.
BFU660F
Product data sheet
Document ID
BFU660F v.1
Revision history
Table 8.
Acronym
DC
LNA
LTE
NPN
RF
SDARS
UMTS
Release date
20110111
Abbreviations
All information provided in this document is subject to legal disclaimers.
Description
Direct Current
Low Noise Amplifier
Long Term Evolution
Negative-Positive-Negative
Radio Frequency
Satellite Digital Audio Radio Service
Universal Mobile Telecommunications System
Data sheet status
Product data sheet
Rev. 1 — 11 January 2011
Change notice
-
NPN wideband silicon RF transistor
Supersedes
-
BFU660F
© NXP B.V. 2011. All rights reserved.
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