BFU660F,115 NXP Semiconductors, BFU660F,115 Datasheet - Page 9
![TRANSISTOR NPN SOT343F](/photos/16/0/160096/sot343_sml.jpg)
BFU660F,115
Manufacturer Part Number
BFU660F,115
Description
TRANSISTOR NPN SOT343F
Manufacturer
NXP Semiconductors
Datasheet
1.BFU660F115.pdf
(12 pages)
Specifications of BFU660F,115
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5.5V
Frequency - Transition
21GHz
Noise Figure (db Typ @ F)
0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz
Gain
12dB ~ 21dB
Power - Max
225mW
Dc Current Gain (hfe) (min) @ Ic, Vce
90 @ 10mA, 2V
Current - Collector (ic) (max)
60mA
Mounting Type
Surface Mount
Package / Case
SOT-343F
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
5.5 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
30 mA
Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
90
Gain Bandwidth Product Ft
21 GHz
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NXP Semiconductors
9. Abbreviations
10. Revision history
Table 9.
BFU660F
Product data sheet
Document ID
BFU660F v.1
Revision history
Table 8.
Acronym
DC
LNA
LTE
NPN
RF
SDARS
UMTS
Release date
20110111
Abbreviations
All information provided in this document is subject to legal disclaimers.
Description
Direct Current
Low Noise Amplifier
Long Term Evolution
Negative-Positive-Negative
Radio Frequency
Satellite Digital Audio Radio Service
Universal Mobile Telecommunications System
Data sheet status
Product data sheet
Rev. 1 — 11 January 2011
Change notice
-
NPN wideband silicon RF transistor
Supersedes
-
BFU660F
© NXP B.V. 2011. All rights reserved.
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