BFU660F,115 NXP Semiconductors, BFU660F,115 Datasheet - Page 4
![TRANSISTOR NPN SOT343F](/photos/16/0/160096/sot343_sml.jpg)
BFU660F,115
Manufacturer Part Number
BFU660F,115
Description
TRANSISTOR NPN SOT343F
Manufacturer
NXP Semiconductors
Datasheet
1.BFU660F115.pdf
(12 pages)
Specifications of BFU660F,115
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5.5V
Frequency - Transition
21GHz
Noise Figure (db Typ @ F)
0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz
Gain
12dB ~ 21dB
Power - Max
225mW
Dc Current Gain (hfe) (min) @ Ic, Vce
90 @ 10mA, 2V
Current - Collector (ic) (max)
60mA
Mounting Type
Surface Mount
Package / Case
SOT-343F
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
5.5 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
30 mA
Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
90
Gain Bandwidth Product Ft
21 GHz
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NXP Semiconductors
7. Characteristics
Table 7.
T
BFU660F
Product data sheet
Symbol
V
V
I
I
h
C
C
C
f
G
|s
NF
G
P
C
CBO
T
j
FE
(BR)CBO
(BR)CEO
21
L(1dB)
CES
EBS
CBS
p(max)
ass
= 25
|
2
°
C unless otherwise specified
Parameter
collector-base breakdown voltage
collector-emitter breakdown voltage
collector current
collector-base cut-off current
DC current gain
collector-emitter capacitance
emitter-base capacitance
collector-base capacitance
transition frequency
maximum power gain
insertion power gain
noise figure
associated gain
output power at 1 dB gain compression
Characteristics
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 January 2011
Conditions
I
I
I
I
V
V
V
I
T
I
I
I
T
I
T
I
Z
C
C
E
C
C
C
C
C
C
C
amb
amb
amb
S
CB
EB
CB
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
= 0 mA; V
= 2.5 μA; I
= 1 mA; I
= 10 mA; V
= 20 mA; V
= 30 mA; V
= 30 mA; V
= 6 mA; V
= 6 mA; V
= 60 mA; V
= Z
= 2 V; f = 1 MHz
= 0.5 V; f = 1 MHz
= 2 V; f = 1 MHz
= 25 °C
= 25 °C
= 25 °C
L
= 50 Ω; T
B
CB
CE
CE
E
= 0 mA
CE
CE
CE
CE
CE
= 0 mA
= 8 V
= 2 V; Γ
= 2 V; Γ
= 2 V
= 1 V; f = 2 GHz;
= 1 V; T
= 1 V; T
= 4 V;
amb
= 25 °C
S
S
amb
amb
= Γ
= Γ
NPN wideband silicon RF transistor
= 25 °C
= 25 °C
opt
opt
;
;
[1]
Min Typ
16
5.5
-
-
90
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BFU660F
© NXP B.V. 2011. All rights reserved.
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30
-
135
297
664
138
21
25
24
22
12.5
20
18.5
16
8.5
0.60
0.65
0.70
1.20
21
20
17.5
12
17
17
16
18.5
Max Unit
-
-
60
100
180
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
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-
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4 of 12
V
V
mA
nA
fF
fF
fF
GHz
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm