BFU660F NXP Semiconductors, BFU660F Datasheet
BFU660F
Available stocks
Related parts for BFU660F
BFU660F Summary of contents
Page 1
... BFU660F NPN wideband silicon RF transistor Rev. 1 — 11 January 2011 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION 1.2 Features and benefits Low noise high linearity RF transistor High output third-order intercept point 27 dBm at 1.8 GHz 40 GHz f 1 ...
Page 2
... Discrete pinning Description emitter base emitter collector Ordering information Package Name Description - plastic surface-mounted flat pack package; reverse pinning; 4 leads All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 January 2011 BFU660F NPN wideband silicon RF transistor Min Typ - - - - - - - 30 ≤ 90 °C [ ...
Page 3
... P tot (mW) 250 200 150 100 Power derating curve All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 January 2011 BFU660F NPN wideband silicon RF transistor Description * = p : made in Hong Kong * = t : made in Malaysia * = w : made in China Min Max - 16 - 5 ≤ ...
Page 4
... GHz f = 5.8 GHz mA Ω ° amb f = 1.5 GHz f = 1.8 GHz f = 2.4 GHz f = 5.8 GHz All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 January 2011 BFU660F NPN wideband silicon RF transistor Min Typ Max Unit 5 100 nA ...
Page 5
... V ( Fig 3. DC current gain as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 January 2011 BFU660F NPN wideband silicon RF transistor Min Typ Max Unit = 25 ° 001aam824 ...
Page 6
... G (dB) G p(max) (1) 20 (2) (3) ( All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 January 2011 BFU660F NPN wideband silicon RF transistor 001aam826 100 I (mA ° GHz; T amb 100 I (mA) C © NXP B.V. 2011. All rights reserved. ...
Page 7
... NF min (dB) 1.5 1.0 (1) (2) 0.5 (3) ( (mA) C Fig 10. Minimum noise figure as a function of All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 January 2011 BFU660F NPN wideband silicon RF transistor 001aam829 40 30 MSG 20 2 |S21| G p(max (GHz °C. ...
Page 8
... 2.2 1.35 2.2 0.48 1.3 1.15 1.8 1.15 2.0 0.38 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 January 2011 r BFU660F NPN wideband silicon RF transistor detail 0.2 0.1 EUROPEAN PROJECTION © NXP B.V. 2011. All rights reserved. SOT343F X ISSUE DATE 05-07-12 06-03- ...
Page 9
... DC LNA LTE NPN RF SDARS UMTS 10. Revision history Table 9. Revision history Document ID Release date BFU660F v.1 20110111 BFU660F Product data sheet Abbreviations Description Direct Current Low Noise Amplifier Long Term Evolution Negative-Positive-Negative Radio Frequency Satellite Digital Audio Radio Service Universal Mobile Telecommunications System ...
Page 10
... Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 January 2011 BFU660F NPN wideband silicon RF transistor © NXP B.V. 2011. All rights reserved Datasheet pdf - http://www.DataSheet4U.net/ ...
Page 11
... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 January 2011 BFU660F NPN wideband silicon RF transistor © NXP B.V. 2011. All rights reserved Datasheet pdf - http://www.DataSheet4U.net/ ...
Page 12
... NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 11 January 2011 Document identifier: BFU660F All rights reserved. Datasheet pdf - http://www.DataSheet4U.net/ ...