RC28F256P33TFA NUMONYX, RC28F256P33TFA Datasheet - Page 16

• Manufacturer Part Number: RC28F256P33TFA
• Description: IC FLASH 256MBIT 95NS 64EZBGA
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of RC28F256P33TFA

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 256M (16Mx16)
• Speed: 95ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-EZBGA
• Cell Type: NOR
• Density: 256Mb
• Interface Type: Parallel/Serial
• Boot Type: Top
• Address Bus: 25b
• Operating Supply Voltage (typ): 2.5/3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: EZBGA
• Sync/async: Async/Sync
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.3V
• Operating Supply Voltage (max): 3.6V
• Word Size: 16b
• Number Of Words: 32M
• Supply Current: 50mA
• Mounting: Surface Mount
• Pin Count: 64
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 902063; 902063; RC28F256P33TF 902063

Table 11: Value Changes
5.7
Figure 5:
Application Note
16
Num
1
2
3
4
“n” such that typical max. buffer write time-out = 2
“n” such that maximum buffer write time-out = 2
“n” such that maximum number of bytes in write buffer = 2
Page Mode Read capability
bits 0–7 = “n” such that 2n HEX value represents the number of
read-page bytes. See offset 28h for device word width to
determine page-mode data output width. 00h indicates no
read page buffer.
Main Array Representation
Performance Improvements in P33 65nm
The write performance can be increased on P33 65nm by using the 1024 Byte/512
Word buffer. If buffered programming is being done using the 16 word buffer (similar to
130nm devices), no software changes need to be implemented.
To achieve maximum performance using the 1024 Byte/ 512 Word buffer on 65nm
devices, the following considerations apply during software modifications:
1. Use the Full 1024 Byte/ 512 Word Buffer
2. If 1024 Byte/ 512 Word Buffer is being used, the programming addresses should be
aligned in 512 word address boundaries. For example: Start Programming address is
000000h and End Programming Address is 0001FFh. Please refer to Figure 3.
3. If the addresses must be mis-aligned, they must be in chunks of 256 Words. For
example: Start Programming Address to Start Programming Address + 0000FFh (256
Words). Please refer to Figure 3.
The Read performance can be improved by providing read page buffer up to 16 Words
(P+1Dh).
Difference
FFFFFFh
0001FFh
0003FFh
000000h
000200h
Main Array Representation
n
times typical
n
Words
Words
µ-sec
512
512
n
Words
256
(P+1D)h
Words
offset
256
Words
Words
2Ah
20h
24h
256
256
Conversion Guide: P33 130nm to 65nm
130nm
value
1024
512
64
8
Order Number: 320005-04
(P+1D)h
offset
20h
24h
2Ah
65nm
Values
Sep 2008
1024
4096
1024
32