RC28F256P33TFA NUMONYX, RC28F256P33TFA Datasheet - Page 5

• Manufacturer Part Number: RC28F256P33TFA
• Description: IC FLASH 256MBIT 95NS 64EZBGA
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of RC28F256P33TFA

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 256M (16Mx16)
• Speed: 95ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-EZBGA
• Cell Type: NOR
• Density: 256Mb
• Interface Type: Parallel/Serial
• Boot Type: Top
• Address Bus: 25b
• Operating Supply Voltage (typ): 2.5/3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: EZBGA
• Sync/async: Async/Sync
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.3V
• Operating Supply Voltage (max): 3.6V
• Word Size: 16b
• Number Of Words: 32M
• Supply Current: 50mA
• Mounting: Surface Mount
• Pin Count: 64
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 902063; 902063; RC28F256P33TF 902063

Conversion Guide: P33 130nm to 65nm
1.0
Note:
2.0
2.1
2.2
Application Note
5
Introduction
This application note describes the migration from the Numonyx
Embedded Memory (P33-130nm) device to the Numonyx
Memory (P33-65nm) device.
Unless otherwise indicated, throughout the rest of this document, the Numonyx
StrataFlash
device and the Numonyx
referred to as the P33 65nm device.
This document was written based on device information available at the time. Any
changes in specifications to either device might not be reflected in this document. Refer
to the appropriate documents or sales personnel for the current product information
before finalizing any design.
Device Overview
The following sections provide a brief overview of the feature differences between the
P33 130nm and the P33 65nm devices.
P33 130nm Device
The P33 130nm device features 64-Mbit through 512-Mbit densities and AC/DC
specifications for 52MHz operation. Other features include high performance
synchronous-burst read, Buffered Enhanced Factory Programming (BEFP) with a 32-
word buffer, and an expanded OTP register space. Packaging options include industry-
standard Easy BGA, TSOP and Quad+ packages.
P33 65nm Device
The P33 65nm device features 64-Mbit through 2-Gbit densities and AC/DC
specifications for 52 MHz operation. This document covers specially 256-Mbit and 512-
Mbit (256M/256M) product information. Other features include high performance
synchronous-burst read, Buffered Enhanced Factory Programming (BEFP) with a 512-
word buffer, and an expanded OTP register space. The P33 65nm device also features
enhanced protection via a password access feature, which allows users to protect write
access to the pre-defined blocks. Please contact the Numonyx Sales for further details
concerning password access. Packaging options include industry-standard Easy BGA
and TSOP packages.
®
Embedded Memory (P33-130nm) device is referred to as the P33 130nm
TM
StrataFlash
®
Embedded Memory (P33-65nm) device is
TM
StrataFlash
TM
Order Number: 320005-04
StrataFlash
®
Embedded
®
TM
Sep 2008