MMBZ6V8AL NXP Semiconductors, MMBZ6V8AL Datasheet - Page 10
MMBZ6V8AL
Manufacturer Part Number
MMBZ6V8AL
Description
DIODE,DUAL TVS,UNI DIR,40W,4.5V,SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.MMBZ27VAL235.pdf
(17 pages)
Specifications of MMBZ6V8AL
Reverse Stand-off Voltage Vrwm
4.5V
Breakdown Voltage Range
6.46V To 7.14V
Clamping Voltage Vc Max
9.6V
Diode Configuration
Common Anode
Peak Pulse Current Ippm
2.5A
Diode Case
RoHS Compliant
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NXP Semiconductors
MMBZXAL_SER_2
Product data sheet
Fig 3.
Fig 5.
P
(pF)
(W)
C
PPM
(1) MMBZ5V6AL: unidirectional
(2) MMBZ5V6AL: bidirectional
(3) MMBZ6V8AL: unidirectional
(4) MMBZ6V8AL: bidirectional
250
200
150
100
d
10
10
50
10
1
3
2
10
T
unidirectional and bidirectional
exponential pulse duration (rectangular
waveform); typical values
0
f = 1 MHz; T
voltage; typical values
Rated peak pulse power as a function of
Diode capacitance as a function of reverse
−2
amb
= 25 °C
10
−1
amb
2
= 25 °C
1
(4)
(1)
10
4
(2)
(3)
10
V
R
006aab839
2
006aab320
t
(V)
p
(ms)
Rev. 02 — 10 December 2009
10
Low capacitance unidirectional double ESD protection diodes
6
3
Fig 4.
Fig 6.
P
PPM(25°C)
P
(pF)
PPM
C
(1) MMBZ10VAL: unidirectional
(2) MMBZ10VAL: bidirectional
(3) MMBZ15VAL: unidirectional
(4) MMBZ15VAL: bidirectional
(5) MMBZ27VAL: unidirectional
(6) MMBZ27VAL: bidirectional
150
100
d
1.2
0.8
0.4
50
0
0
0
0
Relative variation of rated peak pulse power as
a function of junction temperature; typical
values
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
(3)
(2)
(1)
50
amb
MMBZxAL series
5
= 25 °C
100
(2)
(3)
10
150
© NXP B.V. 2009. All rights reserved.
V
R
006aab840
T
006aab321
(V)
j
(°C)
(4)
(5)
(6)
200
15
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