MMBZ6V8AL NXP Semiconductors, MMBZ6V8AL Datasheet - Page 7

• Manufacturer Part Number: MMBZ6V8AL
• Description: DIODE,DUAL TVS,UNI DIR,40W,4.5V,SOT23
• Manufacturer: NXP Semiconductors

Specifications of MMBZ6V8AL

• Reverse Stand-off Voltage Vrwm: 4.5V
• Breakdown Voltage Range: 6.46V To 7.14V
• Clamping Voltage Vc Max: 9.6V
• Diode Configuration: Common Anode
• Peak Pulse Current Ippm: 2.5A
• Diode Case: RoHS Compliant

NXP Semiconductors
6. Thermal characteristics
MMBZXAL_SER_2
Product data sheet
Table 9.
[1]
[2]
[3]
Symbol
Per device
R
R
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
Measured from pin 1 or 2 to pin 3.
Parameter
thermal resistance from junction
to ambient
thermal resistance from junction
to solder point
Thermal characteristics
MMBZxAL series
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
Rev. 02 — 10 December 2009
Low capacitance unidirectional double ESD protection diodes
Conditions
in free air
MMBZxAL series
[2]
[1]
[2]
[3]
Min
-
-
-
-
-
Typ
-
-
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
460
420
340
150
50
2
.
Unit
K/W
K/W
K/W
K/W
K/W
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