MMBZ6V8AL NXP Semiconductors, MMBZ6V8AL Datasheet - Page 2

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MMBZ6V8AL

Manufacturer Part Number
MMBZ6V8AL
Description
DIODE,DUAL TVS,UNI DIR,40W,4.5V,SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of MMBZ6V8AL

Reverse Stand-off Voltage Vrwm
4.5V
Breakdown Voltage Range
6.46V To 7.14V
Clamping Voltage Vc Max
9.6V
Diode Configuration
Common Anode
Peak Pulse Current Ippm
2.5A
Diode Case
RoHS Compliant

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NXP Semiconductors
2. Pinning information
MMBZXAL_SER_2
Product data sheet
1.4 Quick reference data
Table 2.
T
Table 3.
Symbol
Per diode
V
C
Pin
1
2
3
amb
RWM
d
= 25
°
C unless otherwise specified.
Parameter
reverse standoff voltage
diode capacitance
Description
cathode (diode 1)
cathode (diode 2)
common anode
Quick reference data
Pinning
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
Rev. 02 — 10 December 2009
Low capacitance unidirectional double ESD protection diodes
Conditions
f = 1 MHz; V
Simplified outline
R
1
= 0 V
MMBZxAL series
3
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2
Typ
-
-
-
-
-
-
-
-
-
-
-
210
175
150
155
130
110
70
65
48
45
Graphic symbol
85
© NXP B.V. 2009. All rights reserved.
1
Max
3
3
4.5
6
6.5
8.5
12
14.5
17
22
26
280
230
200
200
170
140
105
90
80
60
55
3
006aaa154
2
V
V
V
V
V
V
V
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
Unit
V
V
V
V
pF
2 of 17

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