MMBZ6V8AL NXP Semiconductors, MMBZ6V8AL Datasheet - Page 5
MMBZ6V8AL
Manufacturer Part Number
MMBZ6V8AL
Description
DIODE,DUAL TVS,UNI DIR,40W,4.5V,SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.MMBZ27VAL235.pdf
(17 pages)
Specifications of MMBZ6V8AL
Reverse Stand-off Voltage Vrwm
4.5V
Breakdown Voltage Range
6.46V To 7.14V
Clamping Voltage Vc Max
9.6V
Diode Configuration
Common Anode
Peak Pulse Current Ippm
2.5A
Diode Case
RoHS Compliant
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NXP Semiconductors
MMBZXAL_SER_2
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
Table 7.
T
[1]
[2]
Table 8.
Symbol
T
T
T
Symbol
Per diode
V
Standard
Per diode
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
amb
j
amb
stg
ESD
In accordance with IEC 61643-321 (10/1000 μs current waveform).
Measured from pin 1 or 2 to pin 3.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and
standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 or 2 to pin 3.
= 25
°
C unless otherwise specified.
Limiting values
ESD maximum ratings
ESD standards compliance
Parameter
junction temperature
ambient temperature
storage temperature
Parameter
electrostatic discharge
voltage
Rev. 02 — 10 December 2009
Low capacitance unidirectional double ESD protection diodes
…continued
Conditions
IEC 61000-4-2
(contact discharge)
machine model
Conditions
Conditions
> 15 kV (air); > 8 kV (contact)
> 8 kV
MMBZxAL series
[1][2]
[2]
Min
-
−55
−65
Min
-
-
© NXP B.V. 2009. All rights reserved.
Max
150
+150
+150
Max
30
2
Unit
°C
°C
°C
Unit
kV
kV
2
.
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